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Studies on Control of Oxygen Vacancies in MOD-made BaTiO3 Thin Film by Nitrogen Annealing to Improve Resistive Switching Behavior for ReRAM Application

Published online by Cambridge University Press:  09 January 2017

S. Maejima ,
T. Sugie ,
K. Yamashita  and
M. Noda
S. Maejima*
Affiliation:
Kyoto Institute of Technology, Sakyo-ku Matsugasaki Kyoto, Japan
T. Sugie
Affiliation:
Kyoto Institute of Technology, Sakyo-ku Matsugasaki Kyoto, Japan
K. Yamashita
Affiliation:
Kyoto Institute of Technology, Sakyo-ku Matsugasaki Kyoto, Japan
M. Noda
Affiliation:
Kyoto Institute of Technology, Sakyo-ku Matsugasaki Kyoto, Japan
*
*(Email: m6621043@edu.kit.ac.jp)
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Abstract

Metal Organic Decomposition (MOD)-made BaTiO3 (BT) thin films were prepared for Resistive Random Access Memory (ReRAM) under various annealing conditions and investigated for improving the properties of bipolar-type resistive switching, focusing on the relation between oxygen vacancies and the behavior of resistive hysteresis. BT thin films with both pre- and final- annealing in nitrogen showed the resistive hysteresis of bipolar-type switching with current ON/OFF ratios of 2 orders of magnitude for both bias polarities. Finally they showed the endurance property with the 106 switching cycles. It was suggested that oxygen vacancies near the oxide surface (both interfaces at metal electrode/oxide and between layer-by-layered oxide layers) are increased by N2 annealing and enhanced the interface-type resistive switching. Pre-annealing in N2 was also found to be very effective to improve endurance properties, implying that not only the electrode/oxide interface but also the middle part of the film would contribute the interface-type mechanism.

Keywords

memorymetalorganic depositionoxide
Type
Articles
Information
MRS Advances , Volume 2 , Issue 4: Electronics, Magnetics and Photonics , 2017 , pp. 235 - 240
Copyright
Copyright © Materials Research Society 2017 

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References

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