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Simulation Study on Reproducing Resistive Switching Effect by Soret and Fick Diffusion in Resistive Random Access Memory

  • Kentaro Kinoshita (a1) (a2), Ryosuke Koishi (a1), Takumi Moriyama (a1) (a2), Kouki Kawano (a1), Hidetoshi Miyashita (a1) (a2), Sang-Seok Lee (a1) (a2) and Satoru Kishida (a1) (a2)...

Abstract

It is widely received that resistive switching in electrode (EL)/metal oxide (MO)/EL cell is caused by formation and rupture of a conductive filament (CF) consisting of oxygen vacancies, VO’s. However, driving forces that migrate VO’s are not elucidated yet. Considering an experimental fact that good data endurance more than 106 cycles is often observed, an isotropic driving force that gathers oxygen vacancies and form a CF for set switching is required instead of an electric field drift that is widely received as the driving force of set switching.

In this paper, we reexamined driving forces and succeeded in reproducing pulse response data for wide rise time, t rise, range by simulating VO migration assuming Fick and Soret diffusion, without including the electric-field drift. Therefore, it was suggested that controlling T distribution considering the waveforms of write/erase pulses and the thermodynamic parameters of ELs as well as MO is crucial for the optimization of switching speed of ReRAM.

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Keywords

Simulation Study on Reproducing Resistive Switching Effect by Soret and Fick Diffusion in Resistive Random Access Memory

  • Kentaro Kinoshita (a1) (a2), Ryosuke Koishi (a1), Takumi Moriyama (a1) (a2), Kouki Kawano (a1), Hidetoshi Miyashita (a1) (a2), Sang-Seok Lee (a1) (a2) and Satoru Kishida (a1) (a2)...

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