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Selective Growth of Semiconducting Single-Walled Carbon Nanotubes by “In Situ” Methods

Published online by Cambridge University Press:  23 January 2017

Chengzhi Luo  and
Chunxu Pan
Chengzhi Luo
Affiliation:
School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072, China.
Chunxu Pan*
Affiliation:
School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072, China.
*
*(Email: cxpan@whu.edu.cn)
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Abstract

Single-walled carbon nanotubes (SWNTs) possess superior electronic properties that make them ideal candidates for making next-generation electronic circuits. However, the commercially available SWNTs that obtained directly from the viable synthesis procedures are the mixtures of semiconducting (s-) and metallic (m-) SWNTs. That shortcoming of present technologies hinders further studies and limits the scalable applications for a series of promising SWNT-based electronics. Separation of the two species is the way to solve the present dilemma. Herein, this review highlights “in situ” approaches towards selective growth of s-SWNT. The methods and techniques used for the enrichment of s-SWNTs are reviewed. Based on the understanding of the growth mechanism of those strategies, we try to propose the general guideline on that how can we develop the optimal method for the growth of s-SWNTs.

Keywords

chemical synthesissemiconductingnanostructure
Type
Articles
Information
MRS Advances , Volume 2 , Issue 2: Nanomaterials , 2017 , pp. 109 - 116
Copyright
Copyright © Materials Research Society 2017 

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