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Polarization-Induced Transport: A Comparative Study of Ferroelectric and Non-Ferroelectric Dielectric-Gated Organic Field-Effect Transistors

Published online by Cambridge University Press:  02 May 2017

Amrit Laudari ,
Shubhra Gangopadhyay  and
Suchismita Guha
Amrit Laudari
Affiliation:
Department of Physics and Astronomy, University of Missouri, Columbia, MO 65211
Shubhra Gangopadhyay
Affiliation:
Department of Electrical and Computer Engineering, University of Missouri, Columbia, MO 65211
Suchismita Guha*
Affiliation:
Department of Physics and Astronomy, University of Missouri, Columbia, MO 65211
*
*(Email: guhas@missouri.edu)
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Abstract

A comparative study of ferroelectric and non-ferroelectric-gated organic field-effect transistors (FETs) have been carried out by using a small molecule semiconductor 6,13 bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) to understand the fundamental aspects of carrier transport in FET architectures. Temperature-dependent current-voltage characteristics from non-ferroelectric dielectric-gated FETs show a clear activated transport, independent of the dielectric constant. While using the ferroelectric dielectric polymer poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE), where the dielectric constant may be tuned by changing the temperature, a negative temperature coefficient of the carrier mobility is observed beyond 200 K. The polarization fluctuation dominant transport inherent to a ferroelectric dielectric in conjunction with the discrete nature of traps in TIPS-pentacene results in an effective de-trapping of the shallow trap states into more mobile states.

Keywords

electrical propertiesferroelectricorganic
Type
Articles
Information
MRS Advances , Volume 2 , Issue 51: Electronic Devices and Materials , 2017 , pp. 2951 - 2956
Copyright
Copyright © Materials Research Society 2017 

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References

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