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Performance of hydrogenated diamond MISFET using Zr-Si-N as the dielectric layer

  • Pengfei Zhang (a1) (a2), Shufang Yan (a1), Wei Wang (a2), Shujia Zhang (a1), Yanfeng Wang (a2), Jingjing Wang (a2), Weidong Chen (a1) and Hong-Xing Wang (a2)...

Abstract

To better stabilize the hydrogen-terminated surface, a diamond based metal-insulator-semiconductor field-effect transistor with Zr-Si-N dielectric layer has been investigated. On the diamond epitaxial layer grown by microwave plasma chemical vapor deposition system, Pd films were patterned as the source and drain electrodes by photolithography and electron beam evaporation methods. Then, a Zr-Si-N dielectric layer and W metal film were fabricated as the gate structure by radio frequency magnetron sputtering technique. The device illustrates p-type depletion mode, in which the threshold voltage, maximum transconductance, drain current maximum, capacitance and dielectric constant were calculated to be 3.0V, 1.27mS/mm, -5.16 mA/mm, 0.275μF/cm2 and 7.8, respectively. The result suggest that Zr-Si-N dielectric layer is shown to have the ability to protect the two-dimensional hole gas.

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Keywords

Performance of hydrogenated diamond MISFET using Zr-Si-N as the dielectric layer

  • Pengfei Zhang (a1) (a2), Shufang Yan (a1), Wei Wang (a2), Shujia Zhang (a1), Yanfeng Wang (a2), Jingjing Wang (a2), Weidong Chen (a1) and Hong-Xing Wang (a2)...

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