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Performance of hydrogenated diamond MISFET using Zr-Si-N as the dielectric layer

Published online by Cambridge University Press:  14 August 2017

Pengfei Zhang
Affiliation:
College of Materials Science and Engineering, Inner Mongolia University of Technology, Hohhot 010051, China Institute of wide band gap semiconductors, Xi’an Jiaotong University, Xi’an, China
Shufang Yan
Affiliation:
College of Materials Science and Engineering, Inner Mongolia University of Technology, Hohhot 010051, China
Wei Wang
Affiliation:
Institute of wide band gap semiconductors, Xi’an Jiaotong University, Xi’an, China
Shujia Zhang
Affiliation:
College of Materials Science and Engineering, Inner Mongolia University of Technology, Hohhot 010051, China
Yanfeng Wang
Affiliation:
Institute of wide band gap semiconductors, Xi’an Jiaotong University, Xi’an, China
Jingjing Wang
Affiliation:
Institute of wide band gap semiconductors, Xi’an Jiaotong University, Xi’an, China
Weidong Chen
Affiliation:
College of Materials Science and Engineering, Inner Mongolia University of Technology, Hohhot 010051, China
Hong-Xing Wang
Affiliation:
Institute of wide band gap semiconductors, Xi’an Jiaotong University, Xi’an, China
Corresponding
E-mail address:

Abstract

To better stabilize the hydrogen-terminated surface, a diamond based metal-insulator-semiconductor field-effect transistor with Zr-Si-N dielectric layer has been investigated. On the diamond epitaxial layer grown by microwave plasma chemical vapor deposition system, Pd films were patterned as the source and drain electrodes by photolithography and electron beam evaporation methods. Then, a Zr-Si-N dielectric layer and W metal film were fabricated as the gate structure by radio frequency magnetron sputtering technique. The device illustrates p-type depletion mode, in which the threshold voltage, maximum transconductance, drain current maximum, capacitance and dielectric constant were calculated to be 3.0V, 1.27mS/mm, -5.16 mA/mm, 0.275μF/cm2 and 7.8, respectively. The result suggest that Zr-Si-N dielectric layer is shown to have the ability to protect the two-dimensional hole gas.

Type
Articles
Copyright
Copyright © Materials Research Society 2017 

References

Isberg, J., Hammersberg, J., Johansson, E., Wikstrom, T., Twitchen, D. J., Whitehead, A. J., Coe, S. E., Scarsbrook, G. A.. Science. 297, 16701672 (2002).CrossRef
Umezawa, H., Matsumoto, T., Shikata, S.I. IEEE Electron Device Lett. 35, 1112 (2014).CrossRef
Tromson, D., Rebisz-Pomorska, M., Tranchant, N., Isambert, A., Moignau, F., Moussier, A., Marczewska, B., Bergonzo, P. Diam. Relat. Mater. 19, 10121016 (2010).CrossRef
Ozpineci, B., Tolbert, L.M., Islam, S.K., Chinthavali, M., in: European Conference on Power Electronics and Applications, Toulouse, France, 2003.Google Scholar
Kasu, M., Ueda, K., Ye, H., Yamauchi, Y., Sasaki, S., Makimoto, T., Diam. Relat. Mater. 15, 783786 (2006).CrossRef
Hirama, K., Sato, H., Harada, Y., Yamamoto, M. Kazu. J. Appl. Phys. 51, 080112 (2012).CrossRef
Hayashi, K., Yamanaka, S., Okushi, H. and Kajimura, K. Appl. Phys. Lett. 68, 376 (1996).CrossRef
Kawarada, Hiroshi. Surface Science Reports. 26, 205259 (1996).CrossRef
Ueda, K, Kasu, M, Yamauchi, Y, Makimoto, T, Schwitters, M, Twitchen, D. J, Scarsbrook, G.A, Coe, S.E. IEEE Electron Device Letters. 27, 570572 (2006).CrossRef
Kasu, M, Ueda, K, Ye, H, Yamauchi, Y, Sasaki, S, Makimoto, T. Electronics Letters. 41, 12491250 (2005).CrossRef
Kueck, D., Schmidt, A., Denisenko, A. and Kohn, E. Diam. Relat. Mater. 19, 166170 (2010).CrossRef
Saito, T., Park, K.H., Hirama, K., J. Electron. Mater. 40, 247 (2011).CrossRef
Daicho, A., Saito, T., Kurihara, S., Hiraiwa, A., Kawarada, H. J. Appl. Phys. 115, 1033 (2014) .
Kueck, D., Scharpf, J., Ebert, W., Fikry, M., Scholz, F., Kohn, E. Phys. Status Solidi A. 207, 20352039 (2010).CrossRef
Liu, J.W., Liao, M.Y., Imura, M., Koide, Y. Appl. Phys. Lett. 103, 092905 (2013).CrossRef
Winkelmann, A., Cairney, J.M, Hoffman, M.J., Martin, P.J, Bendavid, A. Surface and Coatings Technology. 200, 4213–1219 (2006).CrossRef
Nose, M., Zhou, M., Nagae, T., Mae, T., Yokota, M., Saji, S. Surface and Coatings Technology. 132, 163168 (2000).CrossRef
Song, Z.X., Xu, K.W., Chen, H. Thin Solid Films. 468, 203207 (2004).CrossRef
Wang, W., Hu, C., Li, F.N., Li, S. Y., Liu, Z.C., Wang, F., Fu, J., Wang, H. X. Diam. Relat. Mater. 59, 9094 (2015).CrossRef
Schroder, D.K., Semiconductor Material and Device Characterization (Wiley-IEEE Press, New York, 1990) pp. 208.Google Scholar

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Performance of hydrogenated diamond MISFET using Zr-Si-N as the dielectric layer
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