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Nondestructive High-Power-High-Temperature Raman Spectroscopy for Probing Microscopic Structural Variations in CZTSe Alloys

Published online by Cambridge University Press:  31 May 2017

Qiong Chen ,
Sergio Bernardi  and
Yong Zhang
Qiong Chen
Affiliation:
Department of Electrical and Computer Engineering, and Energy Production and Infrastructure Center (EPIC), The University of North Carolina at Charlotte, Charlotte, NC28223, USA
Sergio Bernardi
Affiliation:
Semiconductor Materials Specialist, C.so Trapani 10, 10139Turin, Italy.
Yong Zhang*
Affiliation:
Department of Electrical and Computer Engineering, and Energy Production and Infrastructure Center (EPIC), The University of North Carolina at Charlotte, Charlotte, NC28223, USA
*
*(Email: yong.zhang@uncc.edu)
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Abstract

Even though absorber layers fabricated by different methods may yield comparable efficiencies and appear to be similar under conventional probes, such as low power Raman, PL, XRD, they could in fact be quite different in their microscopic structures. We have developed a novel nondestructive spectroscopy approach, high-power-high-temperature (HPHT) Raman spectroscopy, which is capable of revealing the microscopic structural variations of complex alloys like CZTSe over a large area. CZTSe films prepared by sputtering and co-evaporation methods were examined and compared in both lateral and depth directions. In general, high power (HP) illumination brought qualitatively different changes to the CZTSe samples, not only in the CZTSe Raman peaks but also in the secondary phases, which suggests that there is some subtle microscopic differences between the two types of samples. In addition, 2D Raman mapping revealed a larger spatial extension of the local heating effect caused by HP illumination in the sputtered film, which also indicates that two nominally similar films might have different thermal conductivities. High temperature (HT) measurement, which offers uniform heating as opposed to local heating with high power, further enhances the capability of the approach.

Keywords

microstructureRaman spectroscopythin film
Type
Articles
Information
MRS Advances , Volume 2 , Issue 53: Energy Storage and Conversion , 2017 , pp. 3187 - 3193
Copyright
Copyright © Materials Research Society 2017 

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References

REFERENCES

Grenet, L., Fillon, R., Altamura, G., Fournier, H., Emieux, F., Faucherand, P., et al., Sol. Energy Mater. Sol. Cells, 126, 135 (2014).CrossRefGoogle Scholar
Repins, I., Beall, C., Vora, N., DeHart, C., Kuciauskas, D., Dippo, P., et al. ., Sol. Energy Mater. Sol. Cells, 101, 154 (2012).Google Scholar
Vora, N., Blackburn, J., Repins, I., Beall, C., To, B., Pankow, J., et al. ., J. Vac. Sci. Technol. A, 30, 051201 (2012).Google Scholar
Altosaar, M., Raudoja, J., Timmo, K., Danilson, M., Grossberg, M., Krustok, J., et al. ., Phys. Status Solidi A, 205, 167 (2008).Google Scholar
Khare, A., Himmetoglu, B., Johnson, M., Norris, D. J., Cococcioni, M., and Aydil, E. S., J. Appl. Phys, 111, 083707 (2012).CrossRefGoogle Scholar
Dimitrievska, M., Fairbrother, A., Saucedo, E., Pérez-Rodríguez, A., and Izquierdo-Roca, V., Appl. Phys Lett, 106, 073903 (2015).CrossRefGoogle Scholar
Gürel, T., Sevik, C., and Çağın, T., Phys. Rev. B, 84, 205201 (2011).Google Scholar
Grossberg, M., Krustok, J., Raudoja, J., Timmo, K., Altosaar, M., and Raadik, T., Thin Solid Films, 519, 7403 (2011).Google Scholar
Grossberg, M., Krustok, J., Timmo, K., and Altosaar, M., Thin Solid Films, 517, 2489 (2009).Google Scholar
Redinger, A., Hönes, K., Fontané, X., Izquierdo-Roca, V., Saucedo, E., Valle, N., et al., Appl. Phys. Lett., 98, 101907 (2011).Google Scholar
Li, H., Wang, B., and Li, L., J. Alloys and Compounds, 506, 327 (2010).CrossRefGoogle Scholar
Scott, J., Damen, T., Silfvast, W., Leite, R., and Cheesman, L., Opt. Commun., 1, 397 (1970).Google Scholar
Shan, C., Liu, Z., Zhang, X., Wong, C., and Hark, S., Nanotechnology, 17, 5561 (2006).Google Scholar
Poborchii, V. V., Kolobov, A. V., and Tanaka, K., Appl. Phys. Lett, 72, 1167 (1998).CrossRefGoogle Scholar
Chen, Q. and Zhang, Y., Appl. Phys. Lett., 103, 242104 (2013).Google Scholar
Sekine, T., Izumi, M., Nakashizu, T., Uchinokura, K., and Matsuura, E., J. Phys. Soc. Jpn., 49, 1069 (1980).Google Scholar
Ishii, M., Shibata, K., and Nozaki, H., J. Solid State Chem., 105, 504 (1993).Google Scholar
Luckert, F., Hamilton, D., Yakushev, M., Beattie, N., Zoppi, G., Moynihan, M., et al. ., Appl. Phys. Lett., 99, 062104 (2011).CrossRefGoogle Scholar
Poborchii, V. V., Kolobov, A. V., Caro, J., Zhuravlev, V. V., and Tanaka, K., Chem. Phys. Lett., 280, 17 (1997).Google Scholar
Scragg, J. J., Dale, P. J., Colombara, D., and Peter, L. M., ChemPhysChem, 13, 3035 (2012).Google Scholar