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Mathematical Modeling of Silicon Doping by Neutron Transmutation Doping Method for High Efficient Solar Cells

  • Valery L. Dshkhunyan (a1), Alexander A. Dyakov (a2), Sergey M. Karabanov (a3), Andrey V. Kozlov (a2), Dmitry V. Markov (a2) and Masahiro Hoshino (a4)...

Abstract

It is known that n-Si solar cells have higher efficiency than p-Si solar cells. One of the problems connected with n-Si application for solar cell production is the difficulty of using Czochralski method for growing n-Si ingots, uniform in structure. The present paper examines the possibility of production of n-Si ingots, uniform in resistance, by neutron transmutation doping (NTD) for photovoltaics using the mathematical modeling method. The provided calculation data are obtained by MCU-RFFI/A accounting code with DLC/MCUDAT-1.0 constant library developed by «Kurchatov Institute» Russian Research Center. The MCU accounting code is used for solution of the neutron-transport equation by Monte-Carlo procedure on the basis of estimated nuclear data for arbitrary three-dimensional geometry systems.

The present paper provides the estimation of uniformity of neutron-flux density along the ingot length and radius; dependence of silicon resistance on duration of irradiation. These studies established the neutron flux density distribution along the ingot length and radius; regularities of silicon resistance changes on duration and intensity of irradiation.

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1. Neutron transmutation doping of silicon at research reactors, IAEA-TECDOC-1681, Vienna International Atomic Energy Agency, 2012, p.109.
2. Varlachev, V.A., Emetz, E.G. and Solodovnikov, E.C., Izvestiya Vysshih Uchebnyh Savedeniy. Physics, 55 (11/2), 4547 (2012).
3. Ionov, A.N., Baranov, P.G., et al. , Technical Physics Letters, 32(12), 8793 (2006)
4. Varlachev, V.A., PhD. Thesis, Tomsk, 2015.
5. Emetz, E.G., PhD. Thesis, Tomsk, 2016.
6. Bothe, K and Schmidt, J., 20th European PV Solar Energy Conference, 2005, p. 757
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Keywords

Mathematical Modeling of Silicon Doping by Neutron Transmutation Doping Method for High Efficient Solar Cells

  • Valery L. Dshkhunyan (a1), Alexander A. Dyakov (a2), Sergey M. Karabanov (a3), Andrey V. Kozlov (a2), Dmitry V. Markov (a2) and Masahiro Hoshino (a4)...

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