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Mathematical Modeling of Silicon Doping by Neutron Transmutation Doping Method for High Efficient Solar Cells

Published online by Cambridge University Press:  15 May 2017

Valery L. Dshkhunyan ,
Alexander A. Dyakov ,
Sergey M. Karabanov ,
Andrey V. Kozlov ,
Dmitry V. Markov  and
Masahiro Hoshino
Valery L. Dshkhunyan
Affiliation:
Solar Consult Ltd., 51 V Novaya St., Ryazan390027, Russia
Alexander A. Dyakov
Affiliation:
Institute of Nuclear Materials JSC, P.O. Box 29 Zarechny, Sverdlovsk region624250, Russia
Sergey M. Karabanov*
Affiliation:
Ryazan State Radio Engineering University, 59/1 Gagarina St., Ryazan390005, Russia
Andrey V. Kozlov
Affiliation:
Institute of Nuclear Materials JSC, P.O. Box 29 Zarechny, Sverdlovsk region624250, Russia
Dmitry V. Markov
Affiliation:
Institute of Nuclear Materials JSC, P.O. Box 29 Zarechny, Sverdlovsk region624250, Russia
Masahiro Hoshino
Affiliation:
Japan Semiconductor Engineering Consulting, Buririansu Minami-urawa, 101 Daitakudo 27881-1, Saitama-city, Saitama, Japan
*
*(Email: pvs.solar@gmail.com)
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Abstract

It is known that n-Si solar cells have higher efficiency than p-Si solar cells. One of the problems connected with n-Si application for solar cell production is the difficulty of using Czochralski method for growing n-Si ingots, uniform in structure. The present paper examines the possibility of production of n-Si ingots, uniform in resistance, by neutron transmutation doping (NTD) for photovoltaics using the mathematical modeling method. The provided calculation data are obtained by MCU-RFFI/A accounting code with DLC/MCUDAT-1.0 constant library developed by «Kurchatov Institute» Russian Research Center. The MCU accounting code is used for solution of the neutron-transport equation by Monte-Carlo procedure on the basis of estimated nuclear data for arbitrary three-dimensional geometry systems.

The present paper provides the estimation of uniformity of neutron-flux density along the ingot length and radius; dependence of silicon resistance on duration of irradiation. These studies established the neutron flux density distribution along the ingot length and radius; regularities of silicon resistance changes on duration and intensity of irradiation.

Keywords

Sineutron irradiationnuclear materials
Type
Articles
Information
MRS Advances , Volume 2 , Issue 53: Energy Storage and Conversion , 2017 , pp. 3135 - 3140
Copyright
Copyright © Materials Research Society 2017 

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References

REFERENCES

Neutron transmutation doping of silicon at research reactors, IAEA-TECDOC-1681, Vienna International Atomic Energy Agency, 2012, p.109.Google Scholar
Varlachev, V.A., Emetz, E.G. and Solodovnikov, E.C., Izvestiya Vysshih Uchebnyh Savedeniy. Physics, 55 (11/2), 45–47 (2012).Google Scholar
Ionov, A.N., Baranov, P.G., et al. , Technical Physics Letters, 32(12), 87–93 (2006)CrossRefGoogle Scholar
Varlachev, V.A., PhD. Thesis, Tomsk, 2015.Google Scholar
Emetz, E.G., PhD. Thesis, Tomsk, 2016.Google Scholar
Bothe, K and Schmidt, J., 20th European PV Solar Energy Conference, 2005, p. 757 Google Scholar
Untila, G.G., Kost, T.N., Chebotareva, A.B., et al. ., Solar Cell based on n-type silicon, bifacial, concentrate, PhTS, 46(9), 1217–1223 (2012).Google Scholar
Edelman, B.L., Available at: www.docfoc.com/hit-GGi8u (accessed 17 February 2017).Google Scholar