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The kinetics of Ge lateral overgrowth on SiO2

Published online by Cambridge University Press:  28 December 2015

M. Yako ,
N. J. Kawai ,
Y. Mizuno  and
K. Wada
M. Yako
Affiliation:
Department of Materials Engineering, Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan.
N. J. Kawai
Affiliation:
Department of Materials Engineering, Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan.
Y. Mizuno
Affiliation:
Department of Materials Engineering, Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan.
K. Wada*
Affiliation:
Department of Materials Engineering, Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan.
*
*(Email: kwada@material.t.u-tokyo.ac.jp)
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Abstract

The kinetics of Ge lateral overgrowth on SiO2 with line-shaped Si seeds is examined. The growth process is described by the difference between the growth rates of Ge on (100) planes (GR100) and <311> facets (GR311). The theoretical calculations well reproduce the growth kinetics. It is shown that narrowing the line-seeds helps Ge coalescence and flat film formation.

Keywords

Gecrystal growthkinetics
Type
Articles
Information
MRS Advances , Volume 1 , Issue 23: Electronics and Photonics , 2016 , pp. 1703 - 1708
Copyright
Copyright © Materials Research Society 2015 

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References

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