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Investigation of Deep-Level Defects Lateral Distribution in Active Layers of Multicrystalline Silicon Solar Cells

  • Vladimir G. Litvinov (a1), Alexander V. Ermachikhin (a1), Dmitry S. Kusakin (a1), Nikolay V. Vishnyakov (a1), Valery V. Gudzev (a1), Andrey S. Karabanov (a2), Sergey M. Karabanov (a1) and Sergey P. Vikhrov (a1)...

Abstract

The influence of deep level defects lateral distribution in active layers of multicrystalline Si-based standard solar cells is investigated. Multicrystalline p-type Si wafers with 156×156 mm dimensions and 200 μm thickness were used for SCs preparation. One type of solar cells with conversion efficiency 20.4% was studied using capacitance voltage characteristics method (C-V) and by current deep level transient spectroscopy (I-DLTS). From various places along the diagonal of solar cell’s substrate with 20.4% efficiency nine pieces with an area ∼20 mm2 were extracted and studied. I-DLTS spectra of the five pieces from solar cell were measured. The features of deep levels defects concentration lateral distribution along the SC’s surface were studied.

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*(Email: vglit@yandex.ru)

References

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1. Litvinov, V.G. et al. ., MRS Advances. 1, Issue 14, 911 (2016).
2. Lang, D.V., J. Appl. Phys. 45, 3023 (1974).
3. Litvinov, V.G., Vishnyakov, N.V., Gudzev, V.V., Mishustin, V.G., Karabanov, S.M., Vikhrov, S.P. and Karabanov, A.S. in Power Electronics and Renewable Energy Conversion (USB Proc. IEEE International Conference on Industrial Technology, 2015) pp. 10711074.
4. Mamor, M., Willander, M., Auret, F.D., Meyer, W. and Sveinbjornsson, E., Physical Review B 63, 045201 (2000).

Keywords

Investigation of Deep-Level Defects Lateral Distribution in Active Layers of Multicrystalline Silicon Solar Cells

  • Vladimir G. Litvinov (a1), Alexander V. Ermachikhin (a1), Dmitry S. Kusakin (a1), Nikolay V. Vishnyakov (a1), Valery V. Gudzev (a1), Andrey S. Karabanov (a2), Sergey M. Karabanov (a1) and Sergey P. Vikhrov (a1)...

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