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Influence of microwave photo-excitation on the transport properties of the high mobility GaAs/AlGaAs 2D electron system

Published online by Cambridge University Press:  21 January 2020

T. R. Nanayakkara ,
R. L. Samaraweera ,
A. Kriisa ,
U. Kushan Wijewardena ,
S. Withanage ,
C. Reichl ,
W. Wegscheider  and
R. G. Mani
T. R. Nanayakkara
Affiliation:
Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303, USA
R. L. Samaraweera
Affiliation:
Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303, USA
A. Kriisa
Affiliation:
Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303, USA
U. Kushan Wijewardena
Affiliation:
Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303, USA
S. Withanage
Affiliation:
Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303, USA
C. Reichl
Affiliation:
Laboratorium für Festkörperphysik, ETH Zürich, CH-8093 Zürich, Switzerland
W. Wegscheider
Affiliation:
Laboratorium für Festkörperphysik, ETH Zürich, CH-8093 Zürich, Switzerland
R. G. Mani*
Affiliation:
Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303, USA
*
*Corresponding author: rmani@gsu.edu
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Abstract

We examined the influence of the microwave power on the diagonal resistance in the GaAs/AlGaAs two dimensional electron system (2DES), in order to extract the electron temperature and determine microwave induced heating as a function of the microwave power. The study shows that microwaves produce a small discernable increase in the electron temperature both at null magnetic field and at finite magnetic fields in the GaAs/AlGaAs 2DES. The heating effect at null field appears greater in comparison to the examined finite field interval, although the increase in the electron temperature in the zero-field limit appears smaller than theoretical predictions.

Keywords

magnetoresistance (transport)microwave heatingheterostructure
Type
Articles
Information
MRS Advances , Volume 4 , Issue 61-62: International Materials Research Congress XXVIII , 2019 , pp. 3347 - 3352
Copyright
Copyright © Materials Research Society 2020 

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