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Impact of Divalent Metal Additives on the Structural and Optoelectronic Properties of CH3NH3PbI3 Perovskite Prepared by the Two-Step Solution Process

  • Suneth C. Watthage (a1), Zhaoning Song (a1), Niraj Shrestha (a1), Adam B. Phillips (a1), Geethika K. Liyanage (a1), Paul J. Roland (a1), Randy J. Ellingson (a1) and Michael J. Heben (a1)...

Abstract

Here, we investigate the effect of divalent metal (Zn2+, Cd2+ and Hg2+) on the structural and optoelectronic properties of methylammonium lead iodide perovskite materials prepared by the two-step deposition process. The incorporation of Cd2+ significantly improved the grain size, crystallinity, and charge carrier lifetime of CH3NH3PbI3. The inclusion of Hg2+ and Zn2+ improved the grain size compare to the control sample but adversely affected the optoelectronic properties of perovskite films. The Hg- and Zn-based impurities were formed on the surface of the films, which increased the charge trap density and lead to high non-radiative recombination rate. Time resolved photoluminescence measurements indicated that the Cd and Zn point defects do not create deep-level trap states, but the Zn-modified film showed a low lifetime due to morphology changes in the film and particle segregation on the surface.

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Keywords

Impact of Divalent Metal Additives on the Structural and Optoelectronic Properties of CH3NH3PbI3 Perovskite Prepared by the Two-Step Solution Process

  • Suneth C. Watthage (a1), Zhaoning Song (a1), Niraj Shrestha (a1), Adam B. Phillips (a1), Geethika K. Liyanage (a1), Paul J. Roland (a1), Randy J. Ellingson (a1) and Michael J. Heben (a1)...

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