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High-Power Eu-Doped GaN Red LED Based on a Multilayer Structure Grown at Lower Temperatures by Organometallic Vapor Phase Epitaxy

  • W. Zhu (a1), B. Mitchell (a1) (a2), D. Timmerman (a3), A. Koizumi (a1), T. Gregorkiewicz (a3) and Y. Fujiwara (a1)...

Abstract

A modification of the growth structure of Eu-doped GaN (GaN:Eu) from a monolayer to a multilayer structure (MLS) consisting of alternating GaN and GaN:Eu, was shown to enhance the emission properties. Similarly, lowering the growth temperature of the GaN:Eu to 960°C nearly doubled the photoluminescence emission intensity, and also enhanced device performance. Hence, to design a higher power GaN:Eu red LED, a multilayer structure consisting of 40 pairs of alternating GaN and GaN:Eu was grown at 960°C. This combination resulted in the fabrication of an LED with a maximum output power of 110 μW, which is 5.8 times more output power per GaN:Eu layer thickness as compared to the best previously reported device. Moreover, it was found that the MLS sample grown at 960°C maintained a high crystal quality with low surface roughness, which enabled an increase in the number of pairs from 40 pairs to 100 pairs. An MLS-LED consisting of 100 pairs of alternating GaN/GaN:Eu layers was successfully fabricated, and had a maximum output power of 375 μW with an external quantum efficiency of 4.6%. These are the highest values reported for this system.

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References

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