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Germanium Junctions for Beyond-Si Node Using Flash Lamp Annealing (FLA)

  • H. Tanimura (a1), H. Kawarazaki (a1), K. Fuse (a1), M. Abe (a1), Y. Ito (a1), T. Aoyama (a1), S. Kato (a1), I. Kobayashi (a1), T. Nagayama (a2), N. Hamamoto (a2) and S. Sakai (a2)...

Abstract

We report on the formation of shallow junctions with high activation in both n+/p and p+/n Ge junctions using ion implantation and Flash Lamp Annealing (FLA). The shallowest junction depths (Xj) formed for the n+/p and p+/n junctions were 7.6 nm and 6.1 nm with sheet resistances (Rs) of 860 ohms/sq. and 704 ohms/sq., respectively. By reducing knocked-on oxygen during ion implantation in the n+/p junctions, Rs was decreased by between 5% and 15%. The lowest Rs observed was 235 ohms/sq. with a junction depth of 21.5 nm. Hall measurements clearly revealed that knocked-on oxygen degraded phosphorus activation (carrier concentration). In the p+/n Ge junctions, we show that ion implantation damage induced high boron activation. Using this technique, Rs can be reduced from 475 ohms/sq. to 349 ohms/sq. These results indicate that the potential for forming ultra-shallow n+/p and p+/n junctions in the nanometer range in Ge devices using FLA is very high, leading to realistic monolithically-integrated Ge CMOS devices that can take us beyond Si technology.

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1. Claeys, C. and Simoen, E., Germanium-based technologies, 1st ed. (ELSEVIER, UK, 2007)
2. Kawarazaki, H., Tanimura, H., Ono, Y., Yamada, T., Kato, S., Aoyama, T., and Kobayashi, I., Extended Abstracts of the 15th International Workshop on Junction Technology, (IEEE, 2015) p. 19.
3. Tanimura, H., Kawarazaki, H., Fuse, K., Abe, M., Yamada, T., Ono, Y., Furukawa, M., Ueda, A., Ito, Y., Aoyama, T., Kato, S., Kobayashi, I., Onoda, H., Nakashima, Y., Nagayama, T., Hamamoto, N., and Sakai, S., Extended Abstracts of the 16th International Workshop on Junction Technology, (IEEE, 2016) p. 77.
4. Fistul, V. I., Iglitsyn, M. I., and Omelyanovskii, E. M., Sov. Phys. Solid State 4, 4 (1962)

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