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Electrical characterization of Si-doped n-type α-Ga2O3 on sapphire substrates

Published online by Cambridge University Press:  11 January 2018

Takayuki Uchida ,
Kentaro Kaneko  and
Shizuo Fujita
Takayuki Uchida
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8510, Japan
Kentaro Kaneko
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8510, Japan Photonics and Electronic Science and Engineering Center, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8520, Japan
Shizuo Fujita*
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8510, Japan Photonics and Electronic Science and Engineering Center, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8520, Japan
*
*(Email: fujitasz@kuee.kyoto-u.ac.jp)
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Abstract

Issues on tin (Sn) doping in the mist chemical vapor deposition of α-Ga2O3 was attributed to conversion of ionization states of Sn from Sn4+ to Sn2+ and/or out-diffusion of Sn after thermal annealing, resulting in highly resistive films. Silicon (Si) doping, instead, was succeeded by the use of a novel doping source of chloro-(3-cyanopropyl)-dimethylsilane [ClSi(CH3)2((CH2)2CN)]. Si was uniformly incorporated in the α-Ga2O3 films and the electrical properties were stable even after the thermal annealing. The activation ratio as donors was nearly 100%. The carrier (electron) concentration was controlled to the level of 1018 cm-3 by the [Si]/[Ga] ratio in the source solution. The maximum mobility was 31.5 cm2/V⋅s, in contrast to 24 cm2/V⋅s with Sn doping, suggesting advantage of Si doping . However, the reduction in dislocation defects in the α-Ga2O3 films formed owing to heteroepitaxy on sapphire was suggested to be the important subject to be considered in the next stage.

Keywords

chemical vapor deposition (CVD) (deposition)dopantoxide
Type
Articles
Information
MRS Advances , Volume 3 , Issue 3: Electronics, Magnetics and Photonics , 2018 , pp. 171 - 177
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Copyright
Copyright © Materials Research Society 2018 

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References

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