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Effects of nitrogen impurity on zno crystal growth on Si substrates

  • Soichiro Muraoka (a1), Lyu Jiahao (a1), Daisuke Yamashita (a1), Kunihiro Kamataki (a1), Kazunori Koga (a1), Masaharu Shiratani (a1) and Naho Itagaki (a1)...

Abstract

Effects of nitrogen impurity on ZnO crystal growth on Si substrates have been investigated. The quantitative analysis on the surface morphology deriving height-height correlation function indicates that adsorbed nitrogen atoms suppress the secondary nucleation and enhance adatom migration. The resultant films have smooth surface as well as large grain size up to 24 nm even for small thickness of 10 nm. ZnO films fabricated by using such films as buffer layers possess high crystal quality, where the full width at half maximum of (002) rocking curve is 0.68°, one-fourth of that for films fabricated without nitrogen.

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