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Effects of 250 MeV Au-ion Irradiation on the Superconducting Properties of Ba1−xKxFe2As2 Single Crystals

Published online by Cambridge University Press:  08 June 2016

Laura Gozzelino*
Affiliation:
Department of Applied Science and Technology, Politecnico di Torino, I-10129 Torino, Italy Istituto Nazionale di Fisica Nucleare, Sezione di Torino, I-10125 Torino, Italy
Roberto Gerbaldo
Affiliation:
Department of Applied Science and Technology, Politecnico di Torino, I-10129 Torino, Italy Istituto Nazionale di Fisica Nucleare, Sezione di Torino, I-10125 Torino, Italy
Gianluca Ghigo
Affiliation:
Department of Applied Science and Technology, Politecnico di Torino, I-10129 Torino, Italy Istituto Nazionale di Fisica Nucleare, Sezione di Torino, I-10125 Torino, Italy
Francesco Laviano
Affiliation:
Department of Applied Science and Technology, Politecnico di Torino, I-10129 Torino, Italy Istituto Nazionale di Fisica Nucleare, Sezione di Torino, I-10125 Torino, Italy
Tsuyoshi Tamegai
Affiliation:
Department of Applied Physics, The University of Tokyo, Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Abstract

In this work, we present an approach towards achieving a detailed knowledge on the effects of irradiation in iron-based superconductors with high-energy heavy ions. Ba1−xKxFe2As2 single crystals (x = 0.42) were irradiated with 250 MeV Au-ions. The crystals were shaped to be thin plates with thickness lower than the ion implantation depth and bases perpendicular to the c-axis. By means of the quantitative magneto-optical imaging technique we attained the local current density in pristine and irradiated sample regions without any model assumption. After irradiation a strong critical current density (Jc) enhancement was measured, overcoming a factor 3 at T = 4 K with an irradiation fluence φ = 9.7 × 109 cm-2. Moreover, correlating point by point Jc and induction magnetic field maps, a contribution of the Au-ion induced defects to the anisotropic out of plane pinning (i.e. pinning in the direction parallel to the ion path) turned up. This contribution shows a maximum at applied fields quite lower than the nominal dose equivalent field. Furthermore, the temperature dependence of the penetration depth was evaluated before and after high-fluence irradiations by investigating the high-frequency behavior of these crystals using a microwave coplanar resonator technique. Fitting the experimental curves with a power law, we found a decrease of the power exponent, more pronounced at the higher fluences, that can supports the s± wave model.

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Articles
Copyright
Copyright © Materials Research Society 2016 

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References

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