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Diamond Schottky Barrier Diode with Fluorine- and Oxygen-Termination

Published online by Cambridge University Press:  15 February 2016

Chao Hu ,
Zhangcheng Liu ,
Jingwen Zhang ,
Wei Wang  and
Hong-Xing Wang
Chao Hu
Affiliation:
Institute of wide band gap semiconductors, Xi'an Jiaotong University, Xi'an, China.
Zhangcheng Liu
Affiliation:
Institute of wide band gap semiconductors, Xi'an Jiaotong University, Xi'an, China.
Jingwen Zhang
Affiliation:
Institute of wide band gap semiconductors, Xi'an Jiaotong University, Xi'an, China.
Wei Wang
Affiliation:
Institute of wide band gap semiconductors, Xi'an Jiaotong University, Xi'an, China.
Hong-Xing Wang*
Affiliation:
Institute of wide band gap semiconductors, Xi'an Jiaotong University, Xi'an, China.
*
*(Email: hxwangcn@mail.xjtu.edu.cn)
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Abstract

Schottky properties of Mo on diamond with fluorine- and oxygen-termination had been investigated. Oxygen-termination was generated by aqua regia. Fluorine-termination was generated by CF4 plasma treatment. Mo/Ni/Au was deposited on the diamond surface as Schottky electrode, whose barrier height was evaluated from current-voltage curve. After that, the X-ray photoelectron spectroscopy methods were applied to calculate the Schottky barrier height of Mo on different termination surface. The results indicated that the fluorine-termination and oxygen-termination show different schottky properties.

Keywords

diamondelectrical propertiesx-ray photoelectron spectroscopy (XPS)
Type
Articles
Information
MRS Advances , Volume 1 , Issue 16: Electronics and Photonics , 2016 , pp. 1125 - 1130
Copyright
Copyright © Materials Research Society 2016 

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References

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