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Comparative Study of Annealed and High Temperature Grown ITO and AZO Films for Solar Energy Applications

Published online by Cambridge University Press:  19 June 2017

Diego Alonso-Álvarez*
Affiliation:
Imperial College London, Department of Physics, London SW7 2AZ, United Kingdom
Lourdes Ferre Llin
Affiliation:
University of Glasgow, School of Engineering, Glasgow G12 8LT, United Kingdom
Alexander Mellor
Affiliation:
Imperial College London, Department of Physics, London SW7 2AZ, United Kingdom
Douglas J. Paul
Affiliation:
University of Glasgow, School of Engineering, Glasgow G12 8LT, United Kingdom
Nicholas J. Ekins-Daukes
Affiliation:
Imperial College London, Department of Physics, London SW7 2AZ, United Kingdom
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Abstract

We present the optical and electrical properties of ITO and AZO films fabricated directly on silicon substrates under several growth and annealing temperatures, as well as their potential performance when used as low emissivity coatings in hybrid photovoltaic-thermal systems. We use broadband spectroscopic ellipsometry measurements (from 300 nm to 20 μm) to obtain a consistent model for the permittivity of each of the films. The best performance is found using the properties of the ITO film grown at 250 °C, with a state of the art resistivity of 0.2 mΩ-cm and an optimized thickness of 75 nm which leads to an estimated 50% increase in the extracted power compared to a standard diffused silicon solar cell. The Hall mobility and resistivity measurements of all the films are also provided, complementing and supporting the observed optical properties.

Type
Articles
Copyright
Copyright © Materials Research Society 2017 

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References

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