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Atomic Layer Deposition of Cerium Dioxide Film on TiN and Si Substrates: Structural and Chemical Properties

Published online by Cambridge University Press:  05 June 2017

Silvia Vangelista ,
Rossella Piagge ,
Satu Ek ,
Tiina Sarnet ,
Gabriella Ghidini  and
Alessio Lamperti
Silvia Vangelista*
Affiliation:
CNR-IMM - MDM Laboratory, Via C. Olivetti 2, Agrate Brianza (MB) I-20864 Italy
Rossella Piagge
Affiliation:
STMicroelectronics, Via C. Olivetti 2, Agrate Brianza (MB) I-20864 Italy
Satu Ek
Affiliation:
Picosun Oy, Tietotie 3, Espoo FI-02150 Finland
Tiina Sarnet
Affiliation:
Picosun Oy, Tietotie 3, Espoo FI-02150 Finland
Gabriella Ghidini
Affiliation:
STMicroelectronics, Via C. Olivetti 2, Agrate Brianza (MB) I-20864 Italy
Alessio Lamperti
Affiliation:
CNR-IMM - MDM Laboratory, Via C. Olivetti 2, Agrate Brianza (MB) I-20864 Italy
*
*(Email: silvia.vangelista@mdm.imm.cnr.it)
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Abstract

Cerium dioxide (CeO2) thin films were deposited by atomic layer deposition (ALD) on both Si and TiN substrates. The ALD growth produces CeO2 cubic polycrystalline films on both substrates. However, the films show a preferential orientation along <200> crystallographic direction for CeO2/Si or <111> for CeO2/TiN. In correspondence, we measure a relative concentration of Ce3+ equals to 22.0% in CeO2/Si and around 18% in CeO2/TiN, by X-ray photoelectron spectroscopy. Such values indicate the presence of oxygen vacancies in the films. Our results underline the films differences and similarities between ALD-deposited CeO2 either on Si or TiN substrates, thus extending the knowledge on the CeO2 structural and chemical properties.

Keywords

atomic layer depositionx-ray diffraction (XRD)x-ray photoelectron spectroscopy (XPS)
Type
Articles
Information
MRS Advances , Volume 2 , Issue 52: Electronic Devices and Materials , 2017 , pp. 3005 - 3010
Copyright
Copyright © Materials Research Society 2017 

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References

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