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AlGaN/GaN MIS-HEMTs with a p-GaN Cap Layer

Published online by Cambridge University Press:  28 December 2017

Che-Ching Hsu ,
Pei-Chien Shen ,
Yi-Nan Zhong  and
Yue-Ming Hsin
Che-Ching Hsu
Affiliation:
Department of Electrical Engineering, National Central University No. 300, Zhongda Rd., Zhongli District, Taoyuan City32001, Taiwan
Pei-Chien Shen
Affiliation:
Department of Electrical Engineering, National Central University No. 300, Zhongda Rd., Zhongli District, Taoyuan City32001, Taiwan
Yi-Nan Zhong
Affiliation:
Department of Electrical Engineering, National Central University No. 300, Zhongda Rd., Zhongli District, Taoyuan City32001, Taiwan
Yue-Ming Hsin*
Affiliation:
Department of Electrical Engineering, National Central University No. 300, Zhongda Rd., Zhongli District, Taoyuan City32001, Taiwan
*
*(Email: yhsin@ee.ncu.edu.tw)
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Abstract

In this study, AlGaN/GaN MIS-HEMTs with a p-GaN cap layer and ALD deposited Al2O3 gate insulator were fabricated. Devices with two different thicknesses of p-GaN cap layers were investigated and compared. AlGaN/GaN MIS-HEMT with an 8-nm p-GaN cap showed a better DC characteristics than device with a 5-nm p-GaN cap. The drain current of 662.9 mA/mm, a high on/off current ratio of 2.67×109 and a breakdown voltage of 672 V were measured in device with an 8-nm p-GaN cap. In addition, lateral leakage current was investigated by using adjacent MIS gate structures with a separation of 3 μm to investigate the leakage current.

Keywords

devicesIII-Vcompound
Type
Articles
Information
MRS Advances , Volume 3 , Issue 3: Electronics, Magnetics and Photonics , 2018 , pp. 143 - 146
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Copyright
Copyright © Materials Research Society 2017 

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References

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