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AlGaN/GaN HEMTs with 2DHG Back Gate Control

  • Wei-Tse Lin (a1), Wen-Chia Liao (a1), Yi-Nan Zhong (a1) and Yue-ming Hsin (a1)


In this study, AlGaN/GaN high electron mobility transistors (HEMTs) with a two-dimensional hole gas (2DHG) were investigated. In addition to a two-dimensional electron gas (2DEG) formed at the interface of the AlGaN and GaN layers for being a channel, a 2DHG was designed and formed underneath the channel to be the back gate. The simulated results showed the operation of device can be depletion-mode and enhancement-mode by adjusting the back gate bias. The fabricated devices showed the feasibility of 2DHG back gate control.


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1. Mishra, U. K., Shen, L., and Kazior, T. E., and Wu, Y.-F., Proc. IEEE, 2, 287 (2008).
2. Kaminski, N., and Hilt, O., IET Circ. Devices Syst., 8, 227 (2014).
3. Green, B., Moore, K., Hill, D., CdeBaca, M. and Schultz, J., IEEE BCTM, 101106, (2013)
4. Choi, Y. C., Pophristic, M., and Eastman, L. F., Appl. Power Elec. Co., 12641267, (2007)
5. Jogai, B., physica status solidi (b), 233, 506 (2002)
6. Nakajima, A., Adachi, K., Shimizu, M., and Okumura, H., Appl. Phys. Lett., 89, 193 (2006).
7. Nakajima, A., Sumida, Y., Dhyani, M. H., Kawai, H., and Narayanan, E. M. S., IEEE Electron Device Lett., 32, 542 (2011).
8. Chu, R. M., Cao, Y., Chen, M., Li, R., and Zehnder, D., IEEE Electron Device Lett., 37, 269 (2016).
9. Patil, M. B., Agarwala, S., and Morkoc, H., Electronic Lett., 24, 925 (1988).
10. Wang, L., Zhong, X., and Xu, J., J Comput. Electron, 13, 872 (2014).
11. Chiu, H.-C., Peng, L.-Y., Yang, C.-W., Wang, H.-C., Hsin, Y.-M., and Chyi, J.-I., IEEE Trans. Electron Devices, 62, 507 (2015).



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