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AlGaN/GaN HEMTs with 2DHG Back Gate Control

  • Wei-Tse Lin (a1), Wen-Chia Liao (a1), Yi-Nan Zhong (a1) and Yue-ming Hsin (a1)

Abstract

In this study, AlGaN/GaN high electron mobility transistors (HEMTs) with a two-dimensional hole gas (2DHG) were investigated. In addition to a two-dimensional electron gas (2DEG) formed at the interface of the AlGaN and GaN layers for being a channel, a 2DHG was designed and formed underneath the channel to be the back gate. The simulated results showed the operation of device can be depletion-mode and enhancement-mode by adjusting the back gate bias. The fabricated devices showed the feasibility of 2DHG back gate control.

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