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Thermoelectric properties of Cr-doped higher manganese silicides prepared using spark plasma sintering

Published online by Cambridge University Press:  12 February 2018

Tomoyuki Nakamura*
Affiliation:
Department of Materials Science and Technology, Tokyo University of Science, 6-3-1 Niijyuku, Katsushika-Ku, Tokyo, 125-8585Japan SWCC Showa Cable Systems Co., Ltd., 4-1-1 Minami-Hashimoto Chuo-Ku Sagamihara-shi, Kanagawa-ken, 252-0253Japan
Kentaro Yoshioka
Affiliation:
SWCC Showa Cable Systems Co., Ltd., 4-1-1 Minami-Hashimoto Chuo-Ku Sagamihara-shi, Kanagawa-ken, 252-0253Japan
Ryuichi Arai
Affiliation:
SWCC Showa Cable Systems Co., Ltd., 4-1-1 Minami-Hashimoto Chuo-Ku Sagamihara-shi, Kanagawa-ken, 252-0253Japan
Jun-ichi Nishioka
Affiliation:
SWCC Showa Cable Systems Co., Ltd., 4-1-1 Minami-Hashimoto Chuo-Ku Sagamihara-shi, Kanagawa-ken, 252-0253Japan
Mikiyasu Hirakawa
Affiliation:
Department of Materials Science and Technology, Tokyo University of Science, 6-3-1 Niijyuku, Katsushika-Ku, Tokyo, 125-8585Japan
Kenjiro Fujimoto
Affiliation:
Department of Pure and Applied Chemistry, Tokyo University of Science, 2641 Yamazaki, Noda-shi, Chiba, 287-8510Japan
Ryuji Tamura
Affiliation:
Department of Materials Science and Technology, Tokyo University of Science, 6-3-1 Niijyuku, Katsushika-Ku, Tokyo, 125-8585Japan
Keishi Nishio
Affiliation:
Department of Materials Science and Technology, Tokyo University of Science, 6-3-1 Niijyuku, Katsushika-Ku, Tokyo, 125-8585Japan
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Abstract

Cr-doped higher manganese silicides (HMSs) (Mn1-xCrx)Si1.75 (x = 0–0.35) have been prepared by repeated sintering from raw elemental powder using spark plasma sintering. The a- and cMn-axis length increases with increasing Cr content x. The results of powder X-ray diffraction and microstructural observation suggest that impurity phases, e.g. (Mn, Cr)Si and CrSi2, exist in the samples with x = 0.20 or above. The electrical resistivities and Seebeck coefficient decrease with increasing Cr content x. The Cr content x of 0.10 indicated the largest power factor at 850 K (1.39×10-3W/mK), followed in order by x of 0.25, 0, 0.05, 0.15, 0.20. To confirm the effect of Cr-doping on outputs of modules, two paired p-n modules consisting of n-type purchased Mg2Si and p-type Cr-doped HMS with x = 0, 0.05, 0.10, and 0.20 elements were prepared. The module consisting of (Mn0.9Cr0.1)Si1.75 showed the highest output, that is, 845 mW at 873 K on the hot side. There was approximately 8% improvement compared with that of the module consisting of Cr-free elements.

Type
Articles
Copyright
Copyright © Materials Research Society 2018 

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References

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