Skip to main content Accessibility help
×
Home
Hostname: page-component-559fc8cf4f-67gxp Total loading time: 0.264 Render date: 2021-03-07T09:54:14.467Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false, "newCitedByModal": true }

Article contents

In-line Monitoring of Grain Size Distribution of Channel Poly Si used in 3D NAND Flash Memory Devices using Multiwavelength Raman Spectroscopy

Published online by Cambridge University Press:  18 January 2016

Noh Yeal Kwak
Affiliation:
FEPT Technology Group, manufacturing & Technology Division, SK hynix, Icheon-si, Gyeonggi-do, 467-701, Korea
Chul Young Ham
Affiliation:
FEPT Technology Group, manufacturing & Technology Division, SK hynix, Icheon-si, Gyeonggi-do, 467-701, Korea
Min Sung Ko
Affiliation:
FEPT Technology Group, manufacturing & Technology Division, SK hynix, Icheon-si, Gyeonggi-do, 467-701, Korea
Sung Chul Shin
Affiliation:
FEPT Technology Group, manufacturing & Technology Division, SK hynix, Icheon-si, Gyeonggi-do, 467-701, Korea
Seung Jin Yeom
Affiliation:
FEPT Technology Group, manufacturing & Technology Division, SK hynix, Icheon-si, Gyeonggi-do, 467-701, Korea
Chul Woo Park
Affiliation:
FEPT Technology Group, manufacturing & Technology Division, SK hynix, Icheon-si, Gyeonggi-do, 467-701, Korea
Chun Ho Kang
Affiliation:
FEPT Technology Group, manufacturing & Technology Division, SK hynix, Icheon-si, Gyeonggi-do, 467-701, Korea
Byung Seok Lee
Affiliation:
FEPT Technology Group, manufacturing & Technology Division, SK hynix, Icheon-si, Gyeonggi-do, 467-701, Korea
Sung Gi Park
Affiliation:
FEPT Technology Group, manufacturing & Technology Division, SK hynix, Icheon-si, Gyeonggi-do, 467-701, Korea
Noh Jung Kwak
Affiliation:
FEPT Technology Group, manufacturing & Technology Division, SK hynix, Icheon-si, Gyeonggi-do, 467-701, Korea
Woo Sik Yoo
Affiliation:
WaferMasters, Inc., 254 East Gish Road, San Jose, CA 95112, USA
Corresponding
E-mail address:
Get access

Abstract

Feasibility of multiwavelength Raman spectroscopy was studied as a potential in-line monitoring technique for grain size distribution in channel poly-Si used in three dimensional stacked NAND (3D NAND) Flash memory devices. Various channel poly-Si materials in 3D-NAND Flash memory devices, converted from chemical vapor deposition (CVD) grown a-Si, were characterized using non-contact, multiwavelength Raman spectroscopy and high resolution cross-sectional transmission electron microscopy (HRXTEM). The Raman characterization results were compared with HRXTEM images. The correlation between the grain size distribution characterized by multiwavelength Raman spectroscopy and “on current” (ION) of 3D NAND Flash memory devices was investigated. Good correlation between these techniques was seen. Multiwavelength Raman spectroscopy is very promising as a non-destructive in-line monitoring technique for grain size distribution in channel poly-Si used in 3D NAND Flash memory devices.

Type
Articles
Copyright
Copyright © Materials Research Society 2016 

Access options

Get access to the full version of this content by using one of the access options below.

References

Choi, E. S. et. al., IEDM, San Francisco, USA (2012)
Lee, S. K., IMW, Milan, Italy (2012)
Walker, Andrew, VLSI Symposium. (2014)
Yoo, W. S. et. at., Jpn. J. Appl. Phys. (2000)
Yoo, W. S. et. at., Jpn. J. Appl. Phys. (2002)
Yoo, W. S. et. al., ECS Trans. (2014)

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 56 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 7th March 2021. This data will be updated every 24 hours.

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

In-line Monitoring of Grain Size Distribution of Channel Poly Si used in 3D NAND Flash Memory Devices using Multiwavelength Raman Spectroscopy
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

In-line Monitoring of Grain Size Distribution of Channel Poly Si used in 3D NAND Flash Memory Devices using Multiwavelength Raman Spectroscopy
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

In-line Monitoring of Grain Size Distribution of Channel Poly Si used in 3D NAND Flash Memory Devices using Multiwavelength Raman Spectroscopy
Available formats
×
×

Reply to: Submit a response


Your details


Conflicting interests

Do you have any conflicting interests? *