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In-line Monitoring of Grain Size Distribution of Channel Poly Si used in 3D NAND Flash Memory Devices using Multiwavelength Raman Spectroscopy

Published online by Cambridge University Press:  18 January 2016

Noh Yeal Kwak*
Affiliation:
FEPT Technology Group, manufacturing & Technology Division, SK hynix, Icheon-si, Gyeonggi-do, 467-701, Korea
Chul Young Ham
Affiliation:
FEPT Technology Group, manufacturing & Technology Division, SK hynix, Icheon-si, Gyeonggi-do, 467-701, Korea
Min Sung Ko
Affiliation:
FEPT Technology Group, manufacturing & Technology Division, SK hynix, Icheon-si, Gyeonggi-do, 467-701, Korea
Sung Chul Shin
Affiliation:
FEPT Technology Group, manufacturing & Technology Division, SK hynix, Icheon-si, Gyeonggi-do, 467-701, Korea
Seung Jin Yeom
Affiliation:
FEPT Technology Group, manufacturing & Technology Division, SK hynix, Icheon-si, Gyeonggi-do, 467-701, Korea
Chul Woo Park
Affiliation:
FEPT Technology Group, manufacturing & Technology Division, SK hynix, Icheon-si, Gyeonggi-do, 467-701, Korea
Chun Ho Kang
Affiliation:
FEPT Technology Group, manufacturing & Technology Division, SK hynix, Icheon-si, Gyeonggi-do, 467-701, Korea
Byung Seok Lee
Affiliation:
FEPT Technology Group, manufacturing & Technology Division, SK hynix, Icheon-si, Gyeonggi-do, 467-701, Korea
Sung Gi Park
Affiliation:
FEPT Technology Group, manufacturing & Technology Division, SK hynix, Icheon-si, Gyeonggi-do, 467-701, Korea
Noh Jung Kwak
Affiliation:
FEPT Technology Group, manufacturing & Technology Division, SK hynix, Icheon-si, Gyeonggi-do, 467-701, Korea
Woo Sik Yoo
Affiliation:
WaferMasters, Inc., 254 East Gish Road, San Jose, CA 95112, USA
*
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Abstract

Feasibility of multiwavelength Raman spectroscopy was studied as a potential in-line monitoring technique for grain size distribution in channel poly-Si used in three dimensional stacked NAND (3D NAND) Flash memory devices. Various channel poly-Si materials in 3D-NAND Flash memory devices, converted from chemical vapor deposition (CVD) grown a-Si, were characterized using non-contact, multiwavelength Raman spectroscopy and high resolution cross-sectional transmission electron microscopy (HRXTEM). The Raman characterization results were compared with HRXTEM images. The correlation between the grain size distribution characterized by multiwavelength Raman spectroscopy and “on current” (ION) of 3D NAND Flash memory devices was investigated. Good correlation between these techniques was seen. Multiwavelength Raman spectroscopy is very promising as a non-destructive in-line monitoring technique for grain size distribution in channel poly-Si used in 3D NAND Flash memory devices.

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Articles
Copyright
Copyright © Materials Research Society 2016 

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References

Choi, E. S. et. al., IEDM, San Francisco, USA (2012)
Lee, S. K., IMW, Milan, Italy (2012)
Walker, Andrew, VLSI Symposium. (2014)
Yoo, W. S. et. at., Jpn. J. Appl. Phys. (2000)
Yoo, W. S. et. at., Jpn. J. Appl. Phys. (2002)
Yoo, W. S. et. al., ECS Trans. (2014)

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In-line Monitoring of Grain Size Distribution of Channel Poly Si used in 3D NAND Flash Memory Devices using Multiwavelength Raman Spectroscopy
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In-line Monitoring of Grain Size Distribution of Channel Poly Si used in 3D NAND Flash Memory Devices using Multiwavelength Raman Spectroscopy
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In-line Monitoring of Grain Size Distribution of Channel Poly Si used in 3D NAND Flash Memory Devices using Multiwavelength Raman Spectroscopy
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