Skip to main content Accessibility help
×
Home

Article contents

Growth of Monolayer WS2 Single Crystals with Atmospheric Pressure CVD: Role of Temperature

Published online by Cambridge University Press:  19 February 2019

Yong Xie
Affiliation:
Key Laboratory of Wide Band-Gap Semiconductor Technology, School of Advanced Materials and Nanotechnology, Xidian University, Xi’an710071, China State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an, 710072, China Case Western Reserve University, Cleveland, OH44106, USA
Guanfei Wang
Affiliation:
Key Laboratory of Wide Band-Gap Semiconductor Technology, School of Advanced Materials and Nanotechnology, Xidian University, Xi’an710071, China
Zhan Wang
Affiliation:
Key Laboratory of Wide Band-Gap Semiconductor Technology, School of Advanced Materials and Nanotechnology, Xidian University, Xi’an710071, China
Tang Nan
Affiliation:
Key Laboratory of Wide Band-Gap Semiconductor Technology, School of Advanced Materials and Nanotechnology, Xidian University, Xi’an710071, China
Haolin Wang
Affiliation:
Key Laboratory of Wide Band-Gap Semiconductor Technology, School of Advanced Materials and Nanotechnology, Xidian University, Xi’an710071, China
Yabin Wang
Affiliation:
Chair for Applied Physics, Friedrich-Alexander University Erlangen-Nuremberg, 91058Erlangen, Germany
Yongjie Zhan
Affiliation:
Institute of Photonics and Photon Technology, Northwest University, Xi’an710069, China
Wanqi Jie
Affiliation:
State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an, 710072, China
Xiaohua Ma
Affiliation:
Key Laboratory of Wide Band-Gap Semiconductor Technology, School of Advanced Materials and Nanotechnology, Xidian University, Xi’an710071, China
Corresponding
E-mail address:
Get access

Abtract

It has been demonstrated that the introduction of NaCl can significantly improve the quality of monolayer WS2 at the growth temperatures ranging from 700°C to 850°C by atmospheric pressure chemical vapor deposition (APCVD) without the assistant of hydrogen. Here, the influence of NaCl on the nucleation and growth of WS2 has been thoroughly investigated. The morphology and quality of WS2 grown with different temperatures are discussed by optical microscope, Raman and Photoluminescence (PL) spectra. It was found that amount of NaCl can efficiently influence the morphology and quality of WS2 crystals. PL intensity of WS2 crystal increases around three times from the center region to the edge of an individual domain, which may be attributed to the appearance of small triangle hollows formed during the growth at the edge of single crystal WS2.

Type
Articles
Copyright
Copyright © Materials Research Society 2019 

Access options

Get access to the full version of this content by using one of the access options below.

References

Liu, Y., Weiss, N.O., Duan, X., Cheng, H.-C., Huang, Y. and Duan, X., Nature Reviews Materials 1, 16042 (2016).CrossRefGoogle Scholar
Zhao, M., Ye, Y., Han, Y., Xia, Y., Zhu, H., Wang, S., Wang, Y., Muller, D.A. and Zhang, X., Nature Nanotechnology 13 (8), 3546-3552 (2015).Google Scholar
Desai, S.B., Madhvapathy, S.R., Sachid, A.B., Llinas, J.P., Wang, Q., Ahn, G.H., Pitner, G., Kim, M.J., Bokor, J., Hu, C., Wong, H.-S.P. and Javey, A., Science 354 (6308), 99-102 (2016).CrossRefGoogle Scholar
Chang, H.Y., Yogeesh, M.N., Ghosh, R., Rai, A., Sanne, A., Yang, S., Lu, N., Banerjee, S.K. and Akinwande, D., Advanced Materials 28(9), 1818 (2016).CrossRefGoogle Scholar
Ma, Y., Dai, Y., Guo, M., Niu, C., Lu, J. and B, Physical Chemistry Chemical Physics 13(34), 15546 (2011).CrossRefGoogle Scholar
Ding, Y. and Xiao, B., RSC Advances 5(24), 18391 (2015).CrossRefGoogle Scholar
Schutte, W.J., De Boer, J.L., and Jellinek, F., Journal of Solid State Chemistry 70 (2), 207-209 (1987).CrossRefGoogle Scholar
Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V. and Kis, A., Nature Nanotechnology 6(3), 147-150 (2011).CrossRefGoogle Scholar
Jeong, H.Y., Jin, Y., Yun, S.J., Zhao, J., Baik, J., Keum, D.H., Lee, H.S. and Lee, Y.H., Advanced Materials 29 (15), 1605043 (2017).CrossRefGoogle Scholar
Zhang, T., Jiang, B., Xu, Z., Mendes, R.G., Xiao, Y., Chen, L., Fang, L., Gemming, T., Chen, S., Rummeli, M.H. and Fu, L., Nature Communications 7, 13911 (2016).CrossRefGoogle Scholar
Phan, H.D., Kim, Y., Lee, J., Liu, R., Choi, Y., Cho, J.H. and Lee, C., Advanced Materials 29 (7), 1603928 (2016).CrossRefGoogle Scholar
Boscher, N.D., Carmalt, C.J. and Parkin, I.P., Journal of Materials Chemistry, 16 (1), 122-127 (2006).CrossRefGoogle Scholar
Zhou, J., Liu, F., Lin, J., Huang, X., Xia, J., Zhang, B., Zeng, Q., Wang, H., Zhu, C., Niu, L., Wang, X., Fu, W., Yu, P., Chang, T.R., Hsu, C.H., Wu, D., Jeng, H.T., Huang, Y., Lin, H., Shen, Z., Yang, C., Lu, L., Suenaga, K., Zhou, W., Pantelides, S.T., Liu, G. and Liu, Z., Advanced Materials 29(3), 1603471 (2016).CrossRefGoogle Scholar
Zhan, Y., Liu, Z., Najmaei, S., Ajayan, P.M. and Lou, J., Small 8 (7), 966 (2012).CrossRefGoogle Scholar
Kang, K.N., Godin, K. and Yang, E.H., Scientific Reports 5, 13205 (2015).CrossRefGoogle Scholar
Xu, Z.-Q., Zhang, Y., Lin, S., Zheng, C., Zhong, Y.L., Xia, X., Li, Z., Sophia, P.J., Fuhrer, M.S., Cheng, Y.-B. and Bao, Q., ACS Nano 9 (6), 6178 (2015).CrossRefGoogle Scholar
Boscher, N.D., Carmalt, C.J. and Parkin, I.P., Journal of Materials Chemistry, 16 (1), 122-127 (2005).CrossRefGoogle Scholar
Eichfeld, S.M., Hossain, L., Lin, Y.-C., Piasecki, A.F., Kupp, B., Birdwell, A.G., Burke, R.A., Lu, N., Peng, X., Li, J., Azcatl, A., McDonnell, S., Wallace, R.M., Kim, M.J., Mayer, T.S., Redwing, J.M. and Robinson, J.A., ACS Nano 9 (2), 2080 (2015).CrossRefGoogle Scholar
Gong, Y., Lin, Z., Ye, G., Shi, G., Feng, S., Lei, Y., Elías, A.L., Perea-Lopez, N., Vajtai, R., Terrones, H., Liu, Z., Terrones, M. and Ajayan, P.M., ACS Nano 9 (12), 11658 (2015).CrossRefGoogle Scholar
Gong, Y., Lin, J., Wang, X., Shi, G., Lei, S., Lin, Z., Zou, X., Ye, G., Vajtai, R., Yakobson, B.I., Terrones, H., Terrones, M., Tay, B.K., Lou, J., Pantelides, S.T., Liu, Z., Zhou, W. and Ajayan, P.M., Nature Materials 13 (12), 1135 (2014).CrossRefGoogle Scholar
Cui, F., Wang, C., Li, X., Wang, G., Liu, K., Yang, Z., Feng, Q., Liang, X., Zhang, Z., Liu, S., Lei, Z., Liu, Z., Xu, H. and Zhang, J., Advanced Materials 28 (25), 5019 (2016).CrossRefGoogle Scholar
McCreary, K.M., et al. , Scientific Reports 6 (5), 1861-1871(2016).Google Scholar
Xie, Y., Ma, X., Wang, Z., Nan, T., Wu, R., Zhang, P., Wang, H., Wang, Y., Zhan, Y. and Hao, Y., MRS Advances 3 (6-7), 365-371 (2018).CrossRefGoogle Scholar
Ling, X., Lin, Y., Ma, Q., Wang, Z., Song, Y., Yu, L., Huang, S., Fang, W., Zhang, X., Hsu, A.L., Bie, Y., Lee, Y.H., Zhu, Y., Wu, L., Li, J., Jarillo-Herrero, P., Dresselhaus, M., Palacios, T. and Kong, J., Advanced Materials 28 (12), 2322 (2016).CrossRefGoogle Scholar
Wang, Z., Xie, Y., Wang, H. L., Wu, R. X., Nan, T., Zhan, Y. J., Sun, J., Jiang, T., Zhao, Y., Lei, Y. M., Yang, M., Wang, W. D., Zhu, Q., Ma, X. H. and Hao, Y., Nanotechnology 28 (32), 325602 (2017).CrossRefGoogle Scholar
Li, S., et al. , Applied Materials Today 1 (1), 60-66(2015).CrossRefGoogle Scholar
Xie, Y., Wang, Z., Zhan, Y., Zhang, P., Wu, R., Jiang, T., Wu, S., Wang, H., Zhao, Y., Nan, T. and Ma, X., Nanotechnology 28 (8), 084001 (2017).CrossRefGoogle Scholar
Sheng, Y., Xu, W., Wang, X., He, Z., Rong, Y. and Warner, J.H., Nanoscale 8 (5), 2639-2647 (2016).CrossRefGoogle Scholar
Zheng, S., Sun, L., Zhou, X., Liu, F., Liu, Z., Shen, Z. and Fan, H.J., Advanced Optical Materials 3 (11), 1600-1605 (2016).CrossRefGoogle Scholar
Sarma, P.V., Patil, P.D., Barman, P.K., Kini, R.N. and Shaijumon, M.M., RSC Advances 6 (1), 376-382 (2015).CrossRefGoogle Scholar
McCreary, K.M., Hanbicki, A.T., Singh, S., Kawakami, R.K., Jernigan, G.G., Ishigami, M., Ng, A., Brintlinger, T.H., Stroud, R.M. and Jonke, B.T., Scientific Reports 6 (5), 1861-1871 (2016).Google Scholar
Chen, K., Wan, X., Xie, W., Wen, J., Kang, Z., Zeng, X., Chen, H. and Xu, J., Advanced Materials 27 (41), 6431 (2015).CrossRefGoogle Scholar
Zhang, J., Wang, J., Chen, P., Sun, Y., Wu, S., Jia, Z., Lu, X., Yu, H., Chen, W., Zhu, J., Xie, G., Yang, R., Shi, D., Xu, X., Xiang, J., Liu, K. and Zhang, G., Advanced Materials 28 (10), 1950-1956 (2016).CrossRefGoogle Scholar
Fu, Q., Wang, W., Yang, L., Huang, J., Zhang, J. and Xiang, B., RSC Advances 5 (21), 15795-15799 (2015).CrossRefGoogle Scholar
Cao, D., Shen, T., Liang, P., Chen, X. and Shu, H., The Journal of Physical Chemistry C 119 (8), 42944301 (2015).CrossRefGoogle Scholar
Yu, Y., Yu, Y., Xu, C., Cai, Y.-Q., Su, L., Zhang, Y., Zhang, Y.-W., Gundogdu, K. and Cao, L., Advanced Functional Materials 26 (8), 4733-4739 (2016).CrossRefGoogle Scholar
McCreary, K.M., Hanbicki, A.T., Singh, S., Kawakami, R.K., Jernigan, G.G., Ishigami, M., Ng, A., Brintlinger, T.H., Stroud, R.M. and Jonker, B.T., Scientific Reports 6, 35154 (2016).CrossRefGoogle Scholar
Rong, Y., Fan, Y., Leen Koh, A., Robertson, A.W., He, K., Wang, S., Tan, H., Sinclair, R. and Warner, J.H., Nanoscale 6 (20), 12096-12103 (2014).CrossRefGoogle Scholar
Gutierrez, H.R., Perea-Lopez, N., Elias, A.L., Berkdemir, A., Wang, B., Lv, R., Lopez-Urias, F., Crespi, V.H., Terrones, H. and Terrones, M., Nano Letters 13 (8), 3447 (2013).CrossRefGoogle Scholar
Cain, J.D., Shi, F., Wu, J. and Dravid, V.P., ACS Nano 10 (5), 5440 (2016).CrossRefGoogle Scholar

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 56 *
View data table for this chart

* Views captured on Cambridge Core between 19th February 2019 - 21st January 2021. This data will be updated every 24 hours.

Hostname: page-component-76cb886bbf-7fh6l Total loading time: 1.607 Render date: 2021-01-21T00:04:45.009Z Query parameters: { "hasAccess": "0", "openAccess": "0", "isLogged": "0", "lang": "en" } Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false }

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Growth of Monolayer WS2 Single Crystals with Atmospheric Pressure CVD: Role of Temperature
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Growth of Monolayer WS2 Single Crystals with Atmospheric Pressure CVD: Role of Temperature
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Growth of Monolayer WS2 Single Crystals with Atmospheric Pressure CVD: Role of Temperature
Available formats
×
×

Reply to: Submit a response


Your details


Conflicting interests

Do you have any conflicting interests? *