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Fabrication of Si1-xGex layer on Si substrate by Screen-Printing

Published online by Cambridge University Press:  01 February 2019

Masahiro Nakahara*
Affiliation:
Toyo Aluminium K.K., 341-14 Higashiyama, Ohtani, Hino-Cho, Gamo-Gun, Shiga529-1608, Japan Graduate School of Engineering, Nagoya University, Furocho, Chikusa-ku, 464-8603, Nagoya, Japan
Moeko Matsubara
Affiliation:
Toyo Aluminium K.K., 341-14 Higashiyama, Ohtani, Hino-Cho, Gamo-Gun, Shiga529-1608, Japan
Shota Suzuki
Affiliation:
Toyo Aluminium K.K., 341-14 Higashiyama, Ohtani, Hino-Cho, Gamo-Gun, Shiga529-1608, Japan
Shogo Fukami
Affiliation:
Graduate School of Engineering, Nagoya University, Furocho, Chikusa-ku, 464-8603, Nagoya, Japan
Marwan Dhamrin
Affiliation:
Toyo Aluminium K.K., 341-14 Higashiyama, Ohtani, Hino-Cho, Gamo-Gun, Shiga529-1608, Japan
Noritaka Usami
Affiliation:
Graduate School of Engineering, Nagoya University, Furocho, Chikusa-ku, 464-8603, Nagoya, Japan
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Abstract

The impact of the Al and Ge ratio in the Al-Ge pastes are investigated for fabricating the single crystalline Si1-xGex thick layers on large area Si substrates by screen-printing metallization process. From X-ray reciprocal space maps, Ge fraction in the fabricated Si1-xGex thick layers are found to increase up to 40% with increasing the Ge ratio in the Al-Ge pastes. On the other hand, the interface of the Si and Si1-xGex layers are getting winding with increasing the Ge ratio in the Al-Ge pastes. The Al-Si-Ge phase diagram indicated that uniform SiGe layer can be fabricated by adjusting the Al-Ge ratio in the pastes within the liquid phase region.

Type
Articles
Copyright
Copyright © Materials Research Society 2019 

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References

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