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Electrical Properties of Bottom Gate Poly-Si TFTs by NiSi2 Seed-Induced Lateral Crystallization and Its Applications

Published online by Cambridge University Press:  14 July 2016

Sol Kyu Lee
Affiliation:
Department of Materials Science and Engineering, Seoul National University, Seoul 151-742, Republic of Korea
Ki Hwan Seok
Affiliation:
Department of Materials Science and Engineering, Seoul National University, Seoul 151-742, Republic of Korea
Zohreh Kiaee
Affiliation:
Department of Materials Science and Engineering, Seoul National University, Seoul 151-742, Republic of Korea
Hyung Yoon Kim
Affiliation:
Department of Materials Science and Engineering, Seoul National University, Seoul 151-742, Republic of Korea
Hee Jae Chae
Affiliation:
Department of Materials Science and Engineering, Seoul National University, Seoul 151-742, Republic of Korea
Yong Hee Lee
Affiliation:
Department of Materials Science and Engineering, Seoul National University, Seoul 151-742, Republic of Korea
Gil Su Jang
Affiliation:
Department of Materials Science and Engineering, Seoul National University, Seoul 151-742, Republic of Korea
Seung Ki Joo
Affiliation:
Department of Materials Science and Engineering, Seoul National University, Seoul 151-742, Republic of Korea
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Abstract

In this paper, the electrical properties of bottom-gate (BG) polycrystalline silicon (poly-Si) thin-film transistors (TFTs) by NiSi2 seed-induced lateral crystallization (SILC) and its applications are presented. Sequential lateral solidification (SLS), which is one of crystallization methods, is known to have poor electrical properties of TFTs with BG structures due to problems induced by laser. Therefore, the laser method cannot be used to well-developed production line of amorphous-Si (a-Si) TFT, resulting in large initial investment cost to change fabrication procedures. On the other hand, the BG poly-Si TFT by SILC (SILC-BGPS TFT) has basically compatible process flows with that of the a-Si TFT. The SILC-BGPS TFT exhibited threshold voltage of -3.9 V, steep subthreshold slope of 130 mV/dec, a high field-effect mobility of 129 cm2/Vs , and I on /I off ratio of ∼106.

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Copyright
Copyright © Materials Research Society 2016 

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