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Characterization of Plasma Induced Damage and Strain on InP Patterns and Their Impact on Luminescence

Published online by Cambridge University Press:  21 May 2018

Marc Fouchier*
Affiliation:
Université Grenoble Alpes / CNRS - LTM, France
Maria Fahed
Affiliation:
Université Grenoble Alpes / CNRS - LTM, France
Erwine Pargon
Affiliation:
Université Grenoble Alpes / CNRS - LTM, France
Névine Rochat
Affiliation:
Université Grenoble Alpes / CEA - LETI, France
Jean-Pierre Landesman
Affiliation:
Institut de Physique de Rennes, Université Rennes-1 and CNRS, France
Denis Rouchon
Affiliation:
Université Grenoble Alpes / CEA - LETI, France
Joyce Roque
Affiliation:
Université Grenoble Alpes / CEA - LETI, France
Karine Rovayaz
Affiliation:
Université Grenoble Alpes / CNRS - LTM, France
Eugénie Martinez
Affiliation:
Université Grenoble Alpes / CEA - LETI, France
Sébastien Labau
Affiliation:
Université Grenoble Alpes / CNRS - LTM, France
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Abstract

The effect of damage induced by plasma etching on the cathodoluminescence intensity of micron-size InP features is studied. At the etched bottom, it is found that the hard mask stripping process is sufficient to recover the luminescence. Within features, the presence of sidewalls reduces luminescence intensity due to additional non-radiative surface recombinations. For a n-doped sample, a carrier diffusion length of 0.84 μm and a reduced nonradiative surface recombination velocity of 2.58 are calculated. Hydrostatic strain within the etched features is measured using the peak shift of the luminescence signal, while in plane strain anisotropy is obtained from its degree of polarization, both with a resolution of about 100 nm.

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Articles
Copyright
Copyright © Materials Research Society 2018 

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References

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