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An amorphous-to-crystalline phase transition within thin silicon films grown through ultra-high-vacuum evaporation on fused quartz substrates

Published online by Cambridge University Press:  11 April 2016

Farida Orapunt ,
Li-Lin Tay ,
David J. Lockwood ,
Jean-Marc Baribeau ,
Joanne C. Zwinkels ,
Mario Noël  and
Stephen K. O’Leary
Farida Orapunt
Affiliation:
Faculty of Engineering and Applied Science, University of Regina, Regina, Saskatchewan, Canada S4S 0A2
Li-Lin Tay
Affiliation:
Measurement Science and Standards, National Research Council of Canada, Ottawa, Ontario, Canada K1A 0R6
David J. Lockwood
Affiliation:
Measurement Science and Standards, National Research Council of Canada, Ottawa, Ontario, Canada K1A 0R6
Jean-Marc Baribeau
Affiliation:
Information and Communication Technologies, National Research Council of Canada, Ottawa, Ontario, Canada K1A 0R6
Joanne C. Zwinkels
Affiliation:
Measurement Science and Standards, National Research Council of Canada, Ottawa, Ontario, Canada K1A 0R6
Mario Noël
Affiliation:
Measurement Science and Standards, National Research Council of Canada, Ottawa, Ontario, Canada K1A 0R6
Stephen K. O’Leary
Affiliation:
School of Engineering, The University of British Columbia, Kelowna, British Columbia, Canada V1V 1V7
Corresponding
E-mail address:
stephen.oleary@ubc.ca
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Abstract

A number of thin silicon films are prepared through ultra-high-vacuum evaporation on optical quality fused quartz substrates with different growth temperatures. Through an analysis of grazing incidence X-ray diffraction results, a phase transition, from amorphous-to-crystalline, is found corresponding to increases in the growth temperature. The corresponding Raman spectra are also observed to change their form as the films go through this phase transition. Using a Raman peak decomposition process, this phase transition is then quantitatively characterized through the determination of the amount of intermediate-range order and the crystalline volume fraction for the various growth temperatures considered in this analysis. The possible device consequences of these results are then commented upon.

Keywords

Si x-ray diffraction (XRD) Raman spectroscopy
Type
Articles
Information
MRS Advances , Volume 1 , Issue 48: Electronics and Photonics , 2016 , pp. 3257 - 3262
Copyright
Copyright © Materials Research Society 2016 

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