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Alternative simple method to realize p-type BaSi2 thin films for Si heterojunction solar cell applications

Published online by Cambridge University Press:  13 February 2018

Kazuma Takahashi*
Affiliation:
Graduate School of Engineering, Nagoya University, Nagoya, 464-8603, Japan
Yoshihiko Nakagawa
Affiliation:
Graduate School of Engineering, Nagoya University, Nagoya, 464-8603, Japan
Kosuke O. Hara
Affiliation:
Center for Crystal Science and Technology, University of Yamanashi, Kofu, 400-8511, Japan
Isao Takahashi
Affiliation:
Graduate School of Engineering, Nagoya University, Nagoya, 464-8603, Japan
Yasuyoshi Kurokawa
Affiliation:
Graduate School of Engineering, Nagoya University, Nagoya, 464-8603, Japan
Noritaka Usami
Affiliation:
Graduate School of Engineering, Nagoya University, Nagoya, 464-8603, Japan
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Abstract:

A novel preparation method of B-doped p-type BaSi2 (p-BaSi2) is proposed to realize heterojunction crystalline Si solar cells with p-BaSi2. The method consists of thermal evaporation of BaSi2 on B-doped amorphous Si (a-Si). In this study, the effect of a-Si interlayers and substrate temperature during BaSi2 evaporation on the electrical characteristics and crystalline quality of the evaporated films were investigated. While no cracks were found in the BaSi2 films formed using hydrogenated a-Si deposited by plasma enhanced chemical vapor deposition (PECVD), the films formed with sputtered a-Si have cracks. In addition, BaSi2 films formed with a 600 °C substrate temperature using PECVD a-Si showed p-type characteristics. After a post-deposition anneal at 800 °C for 5 minutes, the film hole density was measured at 1.3×1019 cm-3 and boron was found to be uniformly distributed throughout the film. These results show that the proposed method using PECVD is promising to obtain p-BaSi2 thin films with high hole density for p-BaSi2/n-type crystalline Si heterojunction solar cells.

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Articles
Copyright
Copyright © Materials Research Society 2018 

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References

References:

Niu, G., Guo, X. and Wang, L., J. Mater. Chem. A, 3, 8970 (2015).CrossRefGoogle Scholar
Friedlmeier, T. M., Jackson, P., Bauer, A., Hariskos, D., Kiowski, O., Menner, R., Wuerz, R. and Powalla, M., Thin Solid Films 633, 363 (2006).Google Scholar
Gloeckler, M., Sankin, I., and Zhao, Z., IEEE J. Photovol. 3, 4 (2013).Google Scholar
Morita, K., Inomata, Y., Suemasu, T., Thin Solid Films 508, 363 (2006).CrossRefGoogle Scholar
Toh, K., Saito, T., Suemasu, T., Jpn. J. Appl. Phys. 50, 068001 (2011).Google Scholar
Kumar, M., Umezawa, N., Imai, M., Appl. Phys. Express 7, 071203 (2014).Google Scholar
Hara, K. O., Usami, N., Toh, K., Baba, M., Toko, K., and Suemasu, T., J. Appl. Phys. 112, 083108 (2012).CrossRefGoogle Scholar
Hara, K. O., Usami, N., Nakamura, K., Takabe, R., Baba, M., Toko, K., and Suemasu, T., Appl. Phys. Express 6, 112302 (2013).CrossRefGoogle Scholar
Toh, K., Saito, T., and Suemasu, T., Jpn. J. Appl. Phys., Part 1 50, 068001 (2011).Google Scholar
Kumar, M., Umezawa, N., and Imai, M., J. Appl. Phys. 115, 203718 (2014).CrossRefGoogle Scholar
Sueamsu, T., Jpn. J. Appl. Phys., Part 1 54, 07JA01 (2015).Google Scholar
Takahashi, K, Nakagawa, Y., Hara, K. O., Kurokawa, Y., and Usami, N., Jap. J. Appl. Phys. 56, 05DB05 (2017).Google Scholar
Varache, R., Leendertz, C., Gueunier-Farret, M. E., Haschke, J., Muñoz, D., and Korte, L., Sol. Energy Mater. Sol. Cells 141, 14 (2015).CrossRefGoogle Scholar
Suemasu, T., Morita, K., Kobayashi, M., Saida, M., and Sasaki, M., Jpn. J. Appl. Phys. 45, L519 (2015).Google Scholar
Yachi, S., Takabe, R., Takeuchi, H., Toko, K., Suemasu, T., Appl. Phys. Lett. 109, 072103 (2016).Google Scholar
Khan, M. A., Hara, K. O., Du, W., Baba, M., Nakamura, K., Suzuno, M., Toko, K., Usami, N., and Suemasu, T., Appl. Phys. Lett. 102, 112107 (2013).CrossRefGoogle Scholar
Kobayashi, M., Matsumoto, Y., Ichikawa, Y., Tsukada, D., and Suemasu, T., Appl. Phys. Express 1, 051403 (2008).CrossRefGoogle Scholar
Takeishi, M., Matsumoto, Y., Sasaki, R., Saito, T., and Suemasu, T., Procedia Eng. 11, 27 (2011).Google Scholar
Hara, K. O., Usami, N., Hoshi, Y., Shiraki, Y., Suzuno, M, Toko, K., and Suemasu, T., Jpn. J. Appl. Phys. 50, 121202 (2011).Google Scholar
Khan, M. A., Hara, K. O., Nakamura, K., Du, W., Baba, M., Toh, K., Suzuno, M., Toko, K., Usami, N., and Suemasu, T., J. Cryst. Growth 378, 201 (2013).CrossRefGoogle Scholar
Khan, M. A., Nakamura, K., Du, W., Toko, K., Usami, N., and Suemasu, T., Appl. Phys. Lett. 104, 252104 (2014).Google Scholar
Deng, T., Gotoh, K., Takabe, R., Xu, Z., Yachi, S., Yamashita, Y., Toko, K., Usami, N., Suemasu, T., Cryst, J.. Growth 475, 186 (2017).Google Scholar
Khan, M. A, Takeishi, M., Matsumoto, Y., Saito, T., Suemasu, T., Physics Procedia 11 11 (2011).CrossRefGoogle Scholar
Tsukada, D., Matsumoto, Y., Sasaki, R., Takeishi, M., Saito, T, Usami, N., Suemasu, T., J. Cryst. Growth 311, 14 (2009).CrossRefGoogle Scholar
Kobayashi, M., Matsumoto, Y., Ichikawa, Y., Tsukada, D., and Suemasu, T., Appl. Phys. Express 1, 051403 (2008).Google Scholar
Kobayashi, M, Morita, K, Suemasu, T, Thin Solid Films 515 8242 (2007).Google Scholar
Nakagawa, Y., Hara, K. O., Suemasu, T., and Usami, N., Jpn. J. Appl. Phys. 54, 08KC03 (2015).Google Scholar
Hara, K. O., Nakagawa, Y., Suemasu, T., and Usami, N., Jpn. J. Appl. Phys. 54, 07JE02 (2015).Google Scholar
Hara, K.O., Yamanaka, J., Arimoto, K., Nakagawa, K., Suemasu, T., and Usami, N., Thin Solid Films 595, 68 (2015).Google Scholar
Hara, K. O., Nakagawa, Y., Suemasu, T., and Usami, N., Procedia Eng. 141, 27 (2016).Google Scholar
Hara, K. O., Trinh, C. T., Arimoto, K., Yamanaka, J., Nakagawa, K., Kurokawa, Y., Suemasu, T., and Usami, N. J. Appl. Phys. 120, 045103 (2016).Google Scholar
Suhara, T., Murata, K., Navabi, A., Hara, Kosuke O., Nakagawa, Y., Trinh, C. T., Kurokawa, Y, Suemasu, T., Wang, K. L., and Usami, N., Jap. J. Appl. Phys. 56, 05DB05 (2017).Google Scholar
Somer, M., Anorg, Z.. Allg. Chem. 626, 2478 (2000).Google Scholar
Sriraman, S., Agarwal, S., Aydil, E. S. and Maroudas, D., Nature 418, 00866 (2002).Google Scholar