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Alternative simple method to realize p-type BaSi2 thin films for Si heterojunction solar cell applications

Published online by Cambridge University Press:  13 February 2018

Kazuma Takahashi ,
Yoshihiko Nakagawa ,
Kosuke O. Hara ,
Isao Takahashi ,
Yasuyoshi Kurokawa  and
Noritaka Usami
Kazuma Takahashi
Affiliation:
Graduate School of Engineering, Nagoya University, Nagoya, 464-8603, Japan
Yoshihiko Nakagawa
Affiliation:
Graduate School of Engineering, Nagoya University, Nagoya, 464-8603, Japan
Kosuke O. Hara
Affiliation:
Center for Crystal Science and Technology, University of Yamanashi, Kofu, 400-8511, Japan
Isao Takahashi
Affiliation:
Graduate School of Engineering, Nagoya University, Nagoya, 464-8603, Japan
Yasuyoshi Kurokawa
Affiliation:
Graduate School of Engineering, Nagoya University, Nagoya, 464-8603, Japan
Noritaka Usami
Affiliation:
Graduate School of Engineering, Nagoya University, Nagoya, 464-8603, Japan
Corresponding
E-mail address:
takahashi.kazuma@h.mbox.nagoya-u.ac.jp
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Abstract:

A novel preparation method of B-doped p-type BaSi2 (p-BaSi2) is proposed to realize heterojunction crystalline Si solar cells with p-BaSi2. The method consists of thermal evaporation of BaSi2 on B-doped amorphous Si (a-Si). In this study, the effect of a-Si interlayers and substrate temperature during BaSi2 evaporation on the electrical characteristics and crystalline quality of the evaporated films were investigated. While no cracks were found in the BaSi2 films formed using hydrogenated a-Si deposited by plasma enhanced chemical vapor deposition (PECVD), the films formed with sputtered a-Si have cracks. In addition, BaSi2 films formed with a 600 °C substrate temperature using PECVD a-Si showed p-type characteristics. After a post-deposition anneal at 800 °C for 5 minutes, the film hole density was measured at 1.3×1019 cm-3 and boron was found to be uniformly distributed throughout the film. These results show that the proposed method using PECVD is promising to obtain p-BaSi2 thin films with high hole density for p-BaSi2/n-type crystalline Si heterojunction solar cells.

Keywords

plasma-enhanced CVD (PECVD) (deposition) photovoltaic sputtering
Type
Articles
Information
MRS Advances , Volume 3 , Issue 25: Energy and Sustainability , 2018 , pp. 1435 - 1442
Copyright
Copyright © Materials Research Society 2018 

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