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Structural Determination Of A Novel Defect In SrBi2Ta2O9 Using Atomic-Resolution Z-Contrast Imaging
Published online by Cambridge University Press: 02 July 2020
Extract
Ferroelectric thin films have received much attention because of their nonvolatile ferroelectric random access memory (NVFRAM) applications. Recently SrBi2Ta2O9 (SBT), a bismuth-layered ferroelectric compound, has been recognized as a leading candidate for the NVFRAM applications because of its negligible fatigue, low leakage currents and ability to maintain bulk characteristics when fabricated in very thin films. While most work up to date has been focused on its thin film forms for nonvolatile memory applications, its intrinsic properties, basic structure and the effects of defects on the properties are not well understood, mainly due to the lack of sizable single crystals and the details of defects. In this paper we report the first direct determination of a novel planar defect structure in SrBi2Ta2O9, using high-resolution Z-contrast imaging.
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- Atomic Structure And Microchemistry Of Interfaces
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- Copyright © Microscopy Society of America