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Simultaneous Quantification of Indium and Nitrogen Concentration in InGaNAs Using HAADF-STEM

  • Tim Grieb (a1), Knut Müller (a1), Emmanuel Cadel (a2), Andreas Beyer (a3), Marco Schowalter (a1), Etienne Talbot (a2), Kerstin Volz (a3) and Andreas Rosenauer (a1)...

Abstract

To unambiguously evaluate the indium and nitrogen concentrations in In x Ga1−x N y As1−y , two independent sources of information must be obtained experimentally. Based on high-resolution scanning transmission electron microscopy (STEM) images taken with a high-angle annular dark-field (HAADF) detector the strain state of the InGaNAs quantum well is determined as well as its characteristic HAADF-scattering intensity. The strain state is evaluated by applying elasticity theory and the HAADF intensity is used for a comparison with multislice simulations. The combination of both allows for determination of the chemical composition where the results are in accordance with X-ray diffraction measurements, three-dimensional atom probe tomography, and further transmission electron microscopy analysis. The HAADF-STEM evaluation was used to investigate the influence of As-stabilized annealing on the InGaNAs/GaAs sample. Photoluminescence measurements show an annealing-induced blue shift of the emission wavelength. The chemical analysis precludes an elemental diffusion as origin of the energy shift—instead the results are in agreement with a model based on an annealing-induced redistribution of the atomic next-neighbor configuration.

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* Corresponding author. grieb@ifp.uni-bremen.de

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Simultaneous Quantification of Indium and Nitrogen Concentration in InGaNAs Using HAADF-STEM

  • Tim Grieb (a1), Knut Müller (a1), Emmanuel Cadel (a2), Andreas Beyer (a3), Marco Schowalter (a1), Etienne Talbot (a2), Kerstin Volz (a3) and Andreas Rosenauer (a1)...

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