Hostname: page-component-8448b6f56d-dnltx Total loading time: 0 Render date: 2024-04-18T16:17:29.158Z Has data issue: false hasContentIssue false

Preparation of thin Sections of (znxcdy)s Fine Particles by an Ultramicrotome

Published online by Cambridge University Press:  02 July 2020

S. H. Ahn
Affiliation:
Technology Division of Samsung Display Devices Co., Suwon, Kyungki-Do, South Korea
G. S. Park
Affiliation:
Analytical Engineering Lab. of Samsung Advanced Institute of Technology, Suwon, 440-600Kyungki-Do, South Korea
N. R. Ahn
Affiliation:
Technology Division of Samsung Display Devices Co., Suwon, Kyungki-Do, South Korea
Get access

Extract

The low voltage phosphors should be efficiently excited with an electron beam value lower than 500V. Thus the properties of low voltage phosphors are directly affected by the surface states of phosphors. Recently, to improve the properties of these phosphors, much analysis has been carried out focused on the surfaces of phosphors using by FESEM, AES or XPS etc.. Nevertheless, the microstructure of phosphors around the surface has not been made clear due to the resolution limits of the above equipments and the difficulties of sample preparation. In this study, in order to analyze the microstructure of phosphors around the surface, we have prepared the thin sections of the (ZnxCdy)S phosphors by an ultramicrotome and carried out high resolution electron microscope(HREM) study on the thin sections.

To carry out ultramicrotomy, the particles of phophors were embedded with acrylic resin (methyl methacrylate: n-butyl methacrylate= 4:6, Benzoyl peroxide 1.5%) in a capsule.

Type
Specimen Preparation
Copyright
Copyright © Microscopy Society of America

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

l)Kommami, H. et al., Applied Surface Science, 113/114(1997) 519∼522Google Scholar
2)Itho, S. et al., J.Electrochem.Soc. Solid-State Science & Technology, Dec.(l987)3178 ∼3181Google Scholar