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Off-axis Electron Holography for 2D Dopant Profiling in p- and n-Metal Oxide Semiconductor Field Effect Transistors (MOSFETs)

Published online by Cambridge University Press:  05 September 2003

K. Vogel ,
A. Lenk ,
H. Lichte ,
H.-J. Engelmann ,
U. Mühle  and
B. Freitag
K. Vogel
Affiliation:
Triebenberg Laboratory, Institute of Applied Physics (IAPD), University of Dresden, D-01062 Dresden, Germany
A. Lenk
Affiliation:
Triebenberg Laboratory, Institute of Applied Physics (IAPD), University of Dresden, D-01062 Dresden, Germany
H. Lichte
Affiliation:
Triebenberg Laboratory, Institute of Applied Physics (IAPD), University of Dresden, D-01062 Dresden, Germany
H.-J. Engelmann
Affiliation:
AMD Saxony LLC & Co. KG, Dresden, Germany
U. Mühle
Affiliation:
Infineon Technologies Dresden, Germany
B. Freitag
Affiliation:
FEI Company, Eindhoven, The Netherlands
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Abstract

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Type
Invited Papers
Information
Microscopy and Microanalysis , Volume 9 , Issue S03 , September 2003 , pp. 240 - 241
Copyright
Copyright © Microscopy Society of America 2003

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