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A new planar defect in SiGe nanopillars

Published online by Cambridge University Press:  30 July 2021

Hongbin Yang ,
Shang Ren ,
Emily Turner ,
Sobhit Singh ,
Kevin Jones ,
Philip Batson ,
David Vanderbilt  and
Eric Garfunkel
Hongbin Yang
Affiliation:
Department of Chemistry and Chemical Biology, Rutgers University, Piscataway, New Jersey, United States
Shang Ren
Affiliation:
Department of Physics and Astronomy, Rutgers University, United States
Emily Turner
Affiliation:
Department of Materials Science and Engineering, University of Florida, United States
Sobhit Singh
Affiliation:
Department of Physics and Astronomy, Rutgers University, United States
Kevin Jones
Affiliation:
Department of Materials Science and Engineering, University of Florida, United States
Philip Batson
Affiliation:
Department of Physics and Astronomy, Rutgers University, United States
David Vanderbilt
Affiliation:
Department of Physics and Astronomy, Rutgers University, United States
Eric Garfunkel
Affiliation:
Department of Chemistry and Chemical Biology, Rutgers University, United States

Abstract

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Type
Defects in Materials: How We See and Understand Them
Information
Microscopy and Microanalysis , Volume 27 , Supplement S1 , August 2021 , pp. 1948 - 1949
Copyright
Copyright © The Author(s), 2021. Published by Cambridge University Press on behalf of the Microscopy Society of America

References

Olivier, E. J., Neethling, J. H., Kroon, R. E., Naidoo, S. R., Allen, C. S., Sawada, H., van Aken, P. A. and Kirkland, A. I., Nat. Mater. 17 (3), 243-248 (2018).CrossRefGoogle Scholar
Muto, S. and Takeda, S., Phil. Mag. Lett. 72 (2), 99-104 (1995).CrossRefGoogle Scholar
Fedina, L., Lebedev, O. I., Van Tendeloo, G., Van Landuyt, J., Mironov, O. A. and Parker, E. H. C., Phys. Rev. B 61 (15), 10336-10345 (2000).CrossRefGoogle Scholar
Humble, P., Proc. R. Soc. London, Ser. A. 381 (1780), 65-81 (1982).Google Scholar
Goss, J. P., Eberlein, T. A. G., Jones, R., Pinho, N., Blumenau, A. T., Frauenheim, T., Briddon, P. R. and berg, S., J. Phys.: Condens. Matter. 14 (48), 12843-12853 (2002).Google Scholar
Goss, J. P., Coomer, B. J., Jones, R., Fall, C. J., Briddon, P. R. and Öberg, S., Phys. Rev. B 67 (16) (2003).Google Scholar
Brewer, W. M., Xin, Y., Hatem, C., Diercks, D., Truong, V. Q. and Jones, K. S., Nano Lett. 17 (4), 2159-2164 (2017).CrossRefGoogle Scholar