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Microstructure Characterization of Defects in Cubic Silicon Carbide Using Transmission Electron Microscopy

  • Bralee Chayasombat (a1), Yusuke Kimata (a1), Tomoharu Tokunaga (a2), Kotaro Kuroda (a2) and Katsuhiro Sasaki (a2)...

Abstract

Microstructures of 3C–SiC grown by chemical vapor deposition (CVD) technique on undulant silicon substrate and a further developed technique called switch-back epitaxy (SBE) were studied using transmission electron microscopy (TEM). In case of the CVD sample, the density of the stacking faults was found to be significantly decreasing along growth direction. Sites of collision of stacking faults were observed using high-resolution transmission electron microscopy. Some of the stacking faults were observed to have disappeared after colliding into each other. The stacking faults were identified to be on the same type of plane and had the same type of displacement vector not only in CVD and SBE but also in the epitaxial layer on the SBE SiC samples.

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Copyright

Corresponding author

*Corresponding author. E-mail: khsasaki@nagoya-u.jp

References

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Nagasawa, H., Yagi, K. & Kawahara, T. (2002). 3C-SiC hetero-epitaxial growth on undulant Si(0 0 1) substrate. J Cryst Growth 237239, 12441249.
Nagasawa, H. & Yamaguchi, Y. (1993). Atomic level epitaxy of 3C-SiC by low pressure vapour deposition with alternating gas supply. Thin Solid Films 225, 230234.
Yagi, K., Kawahara, T., Hatta, N. & Nagasawa, H. (2006). ‘Switch-Back Epitaxy’ as a novel technique for reducing stacking faults in 3C-SiC. Mater Sci Forum 527539, 291294.

Keywords

Microstructure Characterization of Defects in Cubic Silicon Carbide Using Transmission Electron Microscopy

  • Bralee Chayasombat (a1), Yusuke Kimata (a1), Tomoharu Tokunaga (a2), Kotaro Kuroda (a2) and Katsuhiro Sasaki (a2)...

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