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The Mechanism of {113} Defect Formation in Silicon: Clustering of Interstitial–Vacancy Pairs Studied by In Situ High-Resolution Electron Microscope Irradiation

  • Ludmila I. Fedina (a1), Se Ahn Song (a2), Andrey L. Chuvilin (a3), Anton K. Gutakovskii (a1) and Alexander V. Latyshev (a1)...

Abstract

We report the direct visualization of point defect clustering in {113} planes of silicon crystal using a transmission electron microscope, which was supported by structural modeling and high-resolution electron microscope image simulations. In the initial stage an accumulation of nonbonded interstitial–vacancy (I–V) pairs stacked at a distance of 7.68 Å along neighboring atomic chains located on the {113} plane takes place. Further broadening of the {113} defect across its plane is due to the formation of planar fourfold coordinated defects (FFCDs) perpendicular to chains accumulating I–V pairs. Closely packed FFCDs create a sequence of eightfold rings in the {113} plane, providing sites for additional interstitials. As a result, the perfect interstitial chains are built on the {113} plane to create an equilibrium structure. Self-ordering of point defects driven by their nonisotropic strain fields is assumed to be the main force for point defect clustering in the {113} plane under the existence of an energy barrier for their recombination.

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Copyright

Corresponding author

*Corresponding author. E-mail: seahnsong@naver.com

References

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