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Low-Loss EELS Investigations on Atomically Thin MoxW(1-x)S2 Nanoflakes for Delving into Their Optoelectronic Properties

  • M. Pelaez-Fernandez (a1), Y.C. Lin (a2), K. Suenaga (a2) and R. Arenal (a1) (a3)
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References

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[1] Novoselov, K. S., et al, Science 306 2004) p. 666.
[2] Chen, Y., etal, ACS Nano 7(5 2013) p. 4610.
[3] Feng, Q., etal, Adv. Mater. 26 2014) p. 2648.
[4] Dumcenco, D. O., etal, J. Alloys Compd. 506 2010) p. 940.
[5] Dileep, K., etal, Journal of Applied Physics 119 2016) p. 114309.
[6] Nerl, H., etal, NPJ 2D Materials and Applications 1 2017.
[7] Wang, Q. H., etal, Nature Nanotechnology 7 2012) p. 699.
[8] Arenal, R., etal, Phys. Rev. Lett. 95 2005) p. 127601.
[9] Kociack, M. Stephan, O. Chem. Soc. Rev. 43 2014) p. 3865.
[10] Molina-Sanchez, A, etal, Phys Rev B 2013.
[11] This work was supported by the Spanish MINECO (MAT2016-70776-P) and the EU, under G. A. 604391 and 696656. Low-loss EELS developed at the LMA of the INA - U. Zaragoza (Spain).

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