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The Low Energy X-ray Spectrometry Technique as Applied to Semiconductors

  • Pierre-François Staub (a1)

Abstract

We describe the recent introduction of low energy X-ray emission spectrometry as a metrology technique to control the fabrication process in the integrated circuit industry. The benefits of this particular analytical method and the wide field of potential applications are addressed.

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REFERENCES

Bonnelle, C., Vergand, F., Jonnard, P., André, J.-M., Staub, P.-F., Avila, P., Chargelègue, P., Fontaine, M.-F., Laporte, D., Paquier, P., Ringuenet, A., & Rodriguez, B. (1994). Instrument for research on interfaces and surfaces. Rev Sci Instrum 65, 34663471.
Staub, P.-F. (1998). IntriX: A numerical model for electron probe analysis at high depth resolution. Part I—Theoretical description. X-Ray Spect 27, 4357.
Staub, P.-F., Hombourger, C., & Schuhmacher, M. (2002). Quantitative determination of dopant dose in shallow implants using the low energy X-ray emission spectroscopy technique. J Vac Sci Technol B 20, 436440.

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The Low Energy X-ray Spectrometry Technique as Applied to Semiconductors

  • Pierre-François Staub (a1)

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