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Local Strain Relaxation by A-type Dislocation Clusters in InxGal-xN/GaN Film with Indium Compositions of x = 0.07 and 0.12

Published online by Cambridge University Press:  25 July 2016

Hongen Xie ,
Shuo Wang ,
Alec M. Fischer ,
Heather McFAVILEN  and
Fernando A. Ponce
Hongen Xie
Affiliation:
Department of Physics, Arizona State University, Tempe, Arizona, USA School for Engineering of Matter, Transport, and Energy, Arizona State University, Tempe, Arizona, USA
Shuo Wang
Affiliation:
Department of Physics, Arizona State University, Tempe, Arizona, USA
Alec M. Fischer
Affiliation:
Department of Physics, Arizona State University, Tempe, Arizona, USA
Heather McFAVILEN
Affiliation:
Soitec Phoenix Labs, 7700 S. River Parkway, Tempe, Arizona, USA
Fernando A. Ponce
Affiliation:
Department of Physics, Arizona State University, Tempe, Arizona, USA

Abstract

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Abstract
Information
Microscopy and Microanalysis , Volume 22 , Supplement S3: Proceedings of Microscopy & Microanalysis 2016 , July 2016 , pp. 1572 - 1573
Copyright
© Microscopy Society of America 2016 

References

References:

[1] Fischer, A. M., et al, Appl. Phys. Lett. 103 (2013). p. 131101.Google Scholar
[2] Cherns, D. & Preston, A. R. J Electron Micr. Tech. 13 (1989). p. 111.Google Scholar