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Investigating the Effect of As and Te Passivation on the MBE Growth of Cdte (111) On Si (111) Substrates

Published online by Cambridge University Press:  02 July 2020

Y. Xin ,
S. Rujirawat ,
G. Brill ,
N.D. Browning ,
S.J. Pennycook ,
S. Sivananthan  and
R. Sporken
Y. Xin
Affiliation:
Department of Physics, University of Illinois at Chicago, Chicago., IL60607-7059, USA.
S. Rujirawat
Affiliation:
Department of Physics, University of Illinois at Chicago, Chicago., IL60607-7059, USA.
G. Brill
Affiliation:
Department of Physics, University of Illinois at Chicago, Chicago., IL60607-7059, USA.
N.D. Browning
Affiliation:
Department of Physics, University of Illinois at Chicago, Chicago., IL60607-7059, USA.
S.J. Pennycook
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN37831-6031, USA
S. Sivananthan
Affiliation:
Department of Physics, University of Illinois at Chicago, Chicago., IL60607-7059, USA.
R. Sporken
Affiliation:
Department of Physics, University of Illinois at Chicago, Chicago., IL60607-7059, USA.
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Extract

The epitaxial growth of CdTe on Si is currently being investigated as a means of generating an alternative substrate for the subsequent growth and processing of HgCdTe based infrared detecting devices. The most favorable orientation for the growth of high-quality HgCdTe is CdTe (111)B, which has been demonstrated to be grown on miscut Si (001) substrates with very high quality . However, twinning islands and multiple domains are present at the nucleation stage, which has a detrimental effect on the device properties.

An alternative approach, which has the potential to overcome the multiple domain problems in the nucleation stage, is to grow CdTe (111) B on Si (111) substrates. However, previous reports have shown that the direct growth of CdTe onto Si (111) results in an A-polarity for the films . In an attempt to overcome this limitation, passivation of the substrate surface has been investigated.

Type
Defects in Semiconductors
Information
Microscopy and Microanalysis , Volume 5 , Issue S2: Proceedings: Microscopy & Microanalysis '99, Microscopy Society of America 57th Annual Meeting, Microbeam Analysis Society 33rd Annual Meeting, Portland, Oregon August 1-5, 1999 , August 1999 , pp. 724 - 725
Copyright
Copyright © Microscopy Society of America

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References

1.Xin, Y., Browning, N.D., Nellist, P.D., Rujirawat, S., Chen, Y.P., Sivananthan, S., Pennycook, S.J., J. Appl. Phys. 84 (1998) 4292.CrossRefGoogle Scholar
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4. Sponsored by NSF DMR 9733895, DMR-9601792 and DOE DE-AC05-96OR22464.Google Scholar