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In Situ Observation of Single Ion Damage in Electronic Materials

Published online by Cambridge University Press:  23 September 2015

Daniel Bufford
Affiliation:
Sandia National Laboratories, Albuquerque, NM, USA
Remi Dingreville
Affiliation:
Sandia National Laboratories, Albuquerque, NM, USA
Khalid Hattar
Affiliation:
Sandia National Laboratories, Albuquerque, NM, USA

Abstract

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Type
Abstract
Copyright
Copyright © Microscopy Society of America 2015 

References

[1] Schwank, JR, et al, IEEE Transactions on Nuclear Science 60 (2013). p. 20742100.CrossRefGoogle Scholar
[2] Edmondson, PD, et al, Solid State Phenomena 108–109 (2005). p. 145150.CrossRefGoogle Scholar
[3] Mccaffrey, JP, Ultramicroscopy 38 (1991). p. 149157.CrossRefGoogle Scholar
[4] Hattar, K, et al, Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms 338 (2014). p. 5665.Google Scholar
[6] The authors thank X. Zhang (Texas A&M University), D.L. Buller and B.R. Muntifering for their assistance. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of the Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000..Google Scholar