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Identification of interfacial defects in the layered structure of a chalcopyrite compound

Published online by Cambridge University Press:  30 July 2021

Guangming Cheng  and
Nan Yao
Guangming Cheng*
Affiliation:
Princeton Institute for the Science and Technology of Materials, Princeton University, Princeton, New Jersey, United States
Nan Yao*
Affiliation:
Princeton Institute for the Science and Technology of Materials, Princeton University, Princeton, New Jersey, United States
*
Email: gcheng2@princeton.edu and nyao@princeton.edu
Email: gcheng2@princeton.edu and nyao@princeton.edu

Abstract

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Type
Defects in Materials: How We See and Understand Them
Information
Microscopy and Microanalysis , Volume 27 , Supplement S1 , August 2021 , pp. 1750 - 1752
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Copyright
Copyright © The Author(s), 2021. Published by Cambridge University Press on behalf of the Microscopy Society of America

References

Tell, B., Shay, J., Kasper, H., Room-temperature electrical properties of ten I-III-VI2 semiconductors, Journal of Applied Physics 43(5) (1972) 2469-2470.Google Scholar
Frick, J.J., Kushwaha, S.K., Cava, R.J., Bocarsly, A.B., Characterization of Primary Carrier Transport Properties of the Light-Harvesting Chalcopyrite Semiconductors CuIn (S1–x Se x) 2, The Journal of Physical Chemistry C 121(32) (2017) 17046-17052.CrossRefGoogle Scholar
Frick, J.J., Cheng, G., Kushwaha, S., Yao, N., Wagner, S., Bocarsly, A.B., Cava, R.J., Observation of [VCu1–In i 2+ VCu1–] Defect Triplets in Cu-Deficient CuInS2, The Journal of Physical Chemistry C 124(48) (2020) 26415-26427.CrossRefGoogle Scholar
Cheng, G., Yao, S., Sang, X., Hao, B., Zhang, D., Yap, Y.K., Zhu, Y., Evolution of Irradiation-Induced Vacancy Defects in Boron Nitride Nanotubes, Small 12(6) (2016) 818-824.CrossRefGoogle ScholarPubMed
The authors acknowledge the use of Princeton's Imaging and Analysis Center (IAC), which is partially supported by the Princeton Center for Complex Materials (PCCM), a National Science Foundation (NSF) Materials Research Science and Engineering Center (MRSEC; DMR-2011750).Google Scholar