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High Contrast SEM Observation of Semiconductor Dopant Profile using TripleBeam® System

Published online by Cambridge University Press:  04 August 2017

Yuka Aizawa
Affiliation:
Hitachi High-Technologies Corp., Science System Product Div., Ibaraki, Japan.
Takahiro Sato
Affiliation:
Hitachi High-Technologies Corp., Science System Product Div., Ibaraki, Japan.
Takeshi Sunaoshi
Affiliation:
Hitachi High-Technologies Corp., Science System Product Div., Ibaraki, Japan.
Hiroaki Matsumoto
Affiliation:
Hitachi High-Technologies Corp., Science System Product Div., Ibaraki, Japan.
Toshihide Agemura
Affiliation:
Hitachi High-Technologies Corp., Science System Product Div., Ibaraki, Japan.
Shota Torikawa
Affiliation:
Hitachi High-Tech Science Corp., Beam Technology Systems Design Dept., Shizuoka, Japan.
Ikuko Nakatani
Affiliation:
Hitachi High-Tech Science Corp., Beam Technology Systems Design Dept., Shizuoka, Japan.
Masahiro Kiyohara
Affiliation:
Hitachi High-Tech Science Corp., Beam Technology Systems Design Dept., Shizuoka, Japan.
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Abstract

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© Microscopy Society of America 2017 

References

[1] Takahashi, H., et al, Proc. 16th International microscopy congress 2006). p. 1104.Google Scholar
[2] Sunaoshi, T, et al Proceedings of the 2016 IEEE 23rd IPFA, p.148.Google Scholar
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