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Growth and In Situ Characterization of Oxide Epitaxial Heterostructures with Atomic Plane Precision

  • Q. He (a1), S. Jesse (a2) (a3), A.R. Lupini (a1) (a3), M. Fuentes-Cabrera (a2) (a4), B.G. Sumpter (a2) (a4), A. Akbashev (a5), M. Falmbigl (a5), J. Spanier (a5), S. V. Kalinin (a2) (a3) and A.Y. Borisevich (a1) (a2) (a3)...
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[1] Vieu, C., et al, Applied Surface Science (2000) 164, 111117.
[2] Jencic, I., et al, Journal of Applied Physics 1995 78, 974982. bA. Meldrum, L. A. Boatner, R. C. Ewing, Journal of Materials Research 1997, 12, 1816-1827.
[3] Zhang, (a) Y., et al, Physical Review B (2005) 72, 094112. (b) G. Zhu, G. A. Botton, in The 15th European Microscopy Congress, Manchester Central, United Kingdom, 2012.
[4] Zheng, K., et al., Nat Commun (2010) 1, 24.
[5] Jesse, S., et al., Small 11, 58955900, 2015.
[6] George, S.M. Chem. Rev 110, 111131, 2010.
[7] The research is sponsored by the Division of Materials Sciences and Engineering, Office of BasicEnergy Sciences, U.S. Department of Energy. BGS and MF-C were supported by the Center forNanophase Materials Sciences which is sponsored at Oak Ridge National Laboratory by the Office ofScience, Basic Energy Sciences, U.S. Department of Energy. Calculations made use of resources at theOak Ridge Leadership Computing Facility at the Oak Ridge National Laboratory, which is supported by the Office of Science of the U.S. Department of Energy under Contract DE-AC05-00OR22725.

Growth and In Situ Characterization of Oxide Epitaxial Heterostructures with Atomic Plane Precision

  • Q. He (a1), S. Jesse (a2) (a3), A.R. Lupini (a1) (a3), M. Fuentes-Cabrera (a2) (a4), B.G. Sumpter (a2) (a4), A. Akbashev (a5), M. Falmbigl (a5), J. Spanier (a5), S. V. Kalinin (a2) (a3) and A.Y. Borisevich (a1) (a2) (a3)...

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