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Electron Tomography Study on Nanoscale HfOx/AlOy-based Resistive Switching Device

Published online by Cambridge University Press:  04 August 2017

Jiaming Zhang ,
Peter Ercius ,
Peng Zhang ,
Jie Luo ,
Kyungmin Kim ,
Max Zhang  and
R. Stanley Williams
Jiaming Zhang
Affiliation:
Hewlett Packard Enterprise Labs, 1501 Page Mill Rd, Palo Alto, CA
Peter Ercius
Affiliation:
National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA
Peng Zhang
Affiliation:
Nanolab Technologies Inc., Milpitas, CA
Jie Luo
Affiliation:
Nanolab Technologies Inc., Milpitas, CA
Kyungmin Kim
Affiliation:
Hewlett Packard Enterprise Labs, 1501 Page Mill Rd, Palo Alto, CA
Max Zhang
Affiliation:
Hewlett Packard Enterprise Labs, 1501 Page Mill Rd, Palo Alto, CA
R. Stanley Williams
Affiliation:
Hewlett Packard Enterprise Labs, 1501 Page Mill Rd, Palo Alto, CA

Abstract

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Type
Abstract
Information
Microscopy and Microanalysis , Volume 23 , Supplement S1: Proceedings of Microscopy & Microanalysis 2017 , July 2017 , pp. 1492 - 1493
Copyright
© Microscopy Society of America 2017 

References

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[4] Zhang, J. M., Norris, K. J. & Gibson, G. Scientific Reports 6 2016). p 34294.Google Scholar