Hostname: page-component-7bb8b95d7b-fmk2r Total loading time: 0 Render date: 2024-09-25T05:44:09.533Z Has data issue: false hasContentIssue false
  • English
  • Français

Elastic Relaxation of Strained Silicon on Insulator (sSOI) Fins: Nanobeam Diffraction (NBD) and Simulations

Published online by Cambridge University Press:  23 September 2015

J. Li ,
Pierre Morin ,
Q. Liu ,
K. Cheng ,
N. Loubet ,
B. Doris  and
J. Gaudiello
J. Li*
Affiliation:
IBM, Albany, NY 12203 USA
Pierre Morin
Affiliation:
STMicroelectronics, Albany, NY 12203 USA
Q. Liu
Affiliation:
STMicroelectronics, Albany, NY 12203 USA
K. Cheng
Affiliation:
IBM, Albany, NY 12203 USA
N. Loubet
Affiliation:
STMicroelectronics, Albany, NY 12203 USA
B. Doris
Affiliation:
IBM, Albany, NY 12203 USA
J. Gaudiello
Affiliation:
IBM, Albany, NY 12203 USA
*
* E-mail: juntaoli@us.ibm.com

Abstract

An abstract is not available for this content so a preview has been provided. As you have access to this content, a full PDF is available via the ‘Save PDF’ action button.
Image of the first page of this content. For PDF version, please use the ‘Save PDF’ preceeding this image.'
Type
Abstract
Information
Microscopy and Microanalysis , Volume 21 , Supplement S3: Proceedings of Microscopy & Microanalysis 2015 , August 2015 , pp. 1967 - 1968
Copyright
Copyright © Microscopy Society of America 2015 

References

[1] Ghani, T., et al., IEDM (p 1161, 2003.Google Scholar
[2] Khakifirooz, A., et al., VLSI (p 117, (2012).Google Scholar
[3] Cheng, K., et al., IEDM (p 419, (2012).Google Scholar