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Direct Observation of Conducting Path with Highly Reduced Graphene Oxide in Au/GO/Al Resistive Switching Memory

Published online by Cambridge University Press:  25 July 2016

Sung Kyu Kim ,
Jeong Yong Lee  and
Hu Young Jeong
Sung Kyu Kim
Affiliation:
Center of Nanomaterials and Chemical Reactions, Institute of Basic Science (IBS), Daejeon 34047, South Korea Department of Materials Science and Engineering, KAIST, Daejeon 34141, South Korea
Jeong Yong Lee
Affiliation:
Center of Nanomaterials and Chemical Reactions, Institute of Basic Science (IBS), Daejeon 34047, South Korea Department of Materials Science and Engineering, KAIST, Daejeon 34141, South Korea
Hu Young Jeong
Affiliation:
UNIST Central Research Facilities (UCRF) and School of Materials Science and Engineering, UNIST, Ulsan 44919, South Korea

Abstract

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Type
Abstract
Information
Microscopy and Microanalysis , Volume 22 , Supplement S3: Proceedings of Microscopy & Microanalysis 2016 , July 2016 , pp. 1608 - 1609
Copyright
© Microscopy Society of America 2016 

References

[1] Meijer, G. I. Science 319 (2008) 1625.Google Scholar
[2] Jeong, H. Y., et al., Nano Lett 10 (2010) 4381.CrossRefGoogle Scholar
[3] Kim, S. K., et al., Adv. Funct. Mater 25 (2015) 6710.Google Scholar
[4] Mkhoyan, K. A., et al., Nano Lett 9 (2009) 1058.Google Scholar
[5] This work is supported by NRF-2014R1A1A2058713 and IBS-R004-G3.Google Scholar