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Diffusion of Ion Implanted Elements in Silicon by TEM And SIMS

Published online by Cambridge University Press:  02 July 2020

R.R. Vanfleet ,
H. Francois-Saint-Cyr ,
F. Stevie ,
L. Giannuzzi ,
R. Irwin ,
B. Kempshell  and
T Shofner
R.R. Vanfleet
Affiliation:
Advanced Materials Processing and Analysis Center, University of Central Florida, Orlando, FL32826 Department of Physics, University of Central Florida, Orlando, FL32816
H. Francois-Saint-Cyr
Affiliation:
School Of Optics, University of Central Florida, Orlando, FL32816 Mechanical, Materials, and Aerospace Engineering, University of Central Florida, Orlando, FL32816
F. Stevie
Affiliation:
Lucent Technologies, 9333 S. John Young Pkwy, Orlando, FL32819
L. Giannuzzi
Affiliation:
Advanced Materials Processing and Analysis Center, University of Central Florida, Orlando, FL32826 Mechanical, Materials, and Aerospace Engineering, University of Central Florida, Orlando, FL32816
R. Irwin
Affiliation:
Lucent Technologies, 9333 S. John Young Pkwy, Orlando, FL32819
B. Kempshell
Affiliation:
Mechanical, Materials, and Aerospace Engineering, University of Central Florida, Orlando, FL32816
T Shofner
Affiliation:
Lucent Technologies, 9333 S. John Young Pkwy, Orlando, FL32819
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Extract

With the need to introduce new materials and processes to the semiconductor fabrication process, there is a great need to understand the diffusion of a large number of elements in silicon. To this end, a systematic SIMS study was done for implanted elements with subsequent annealing. There is a surprising lack of earlier work on many of the elements of the periodic table and the work that was done did not involve the additional effects of ion implantation.

The recent SIMS results allow the diffusion of the many elements to be categorized into several groups. These effects range from elements that do not appear to move substantially upon annealing, rapid diffusion to the surface, and formation of various peaks in the concentration profile.

Based on the SIMS results, we have used TEM to study the microstructure and composition of subset of the implants. The figure below shows the SIMS and TEM results for a Chromium implant.

Type
Semiconductors
Information
Microscopy and Microanalysis , Volume 6 , Issue S2: Proceedings: Microscopy & Microanalysis 2000, Microscopy Society of America 58th Annual Meeting, Microbeam Analysis Society 34th Annual Meeting, Microscopical Society of Canada/Societe de Microscopie de Canada 27th Annual Meeting, Philadelphia, Pennsylvania August 13-17, 2000 , August 2000 , pp. 1082 - 1083
Copyright
Copyright © Microscopy Society of America

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References

References:

1.Fancois-Saint-Cyr, H., Anoshkina, E., Stevie, F., Chow, L., Richardson, K, and Zhou, D., presented at the annual meeting of the American Vacuum society, October 1999, and submitted to J. Vac. Sci. and Tech.Google Scholar