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Determination Of Rigid-Body Lattice Translations Across Antiphase and Twin Boundaries in Compound Semiconductors

Published online by Cambridge University Press:  02 July 2020

Dov Cohen ,
D. L. Medlin  and
C. Barry Carter
Dov Cohen
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN55455 Sandia National Laboratory, Livermore, CA94551
D. L. Medlin
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN55455
C. Barry Carter
Affiliation:
Sandia National Laboratory, Livermore, CA94551
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Extract

The physical properties of crystalline materials are dependent on the presence and nature of planar defects such as grain boundaries within the crystalline lattice. A comprehensive understanding of a material's properties requires a detailed knowledge of the atomic structure and chemistry of such defects. In general, the crystal orientation relationship at grain boundaries and related planar defects are described in geometric terms, such as the coincidence-site lattice (CSL) model. However, geometric models do not take account of the atomic bonding across grain boundaries whose characteristics differ from that in the bulk. In general, defect structures may relax from the exact CSL orientation in order to minimize the energy of the interface. Lattice relaxations can manifest as a local rearrangement of the atoms close to the boundary and/or rigid-body lattice translations which perturb the relative positions of the grains far from the interface.

Type
Spatially-Resolved Characterization of Interfaces in Materials
Information
Microscopy and Microanalysis , Volume 4 , Issue S2: Proceedings: Microscopy & Microanalysis '98, Microscopy Society of America 56th Annual Meeting, Microbeam Analysis Society 32nd Annual Meeting, Atlanta, Georgia July 12-16, 1998 , July 1998 , pp. 786 - 787
Copyright
Copyright © Microscopy Society of America

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