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Chemical Vapor Deposition of Porous GaN Particles on Silicon

  • Joan J. Carvajal (a1) (a2), Oleksandr V. Bilousov (a1), Dominique Drouin (a2), Magdalena Aguiló (a1), Francesc Díaz (a1) and J. Carlos Rojo (a3)...


We present a technique for the direct deposition of nanoporous GaN particles on Si substrates without requiring any post-growth treatment. The internal morphology of the nanoporous GaN particles deposited on Si substrates by using a simple chemical vapor deposition approach was investigated, and straight nanopores with diameters ranging between 50 and 100 nm were observed. Cathodoluminescence characterization revealed a sharp and well-defined near band-edge emission at ∼365 nm. This approach simplifies other methods used for this purpose, such as etching and corrosion techniques that can damage the semiconductor structure and modify its properties.


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Currently at GE Global Research, Niskayuna, NY 12309, USA



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Aoki, M., Yamane, H., Shimada, M., Sekiguchi, T., Hanada, T., Yao, T., Sarayama, S. & Di Salvo, F.J. (2000). Growth of GaN single crystals from a Na-Ga melt at 750°C and 5Mpa of N2 . J Crystal Growth 218, 712.
Bressets, P.M.M.C., Knappen, J.W.J., Meulenkamp, E.A. & Kelly, J.J. (1992). Visible light emission from a porous silicon/solution diode. Appl Phys Lett 61, 108110.
Carvajal, J.J. & Rojo, J.C. (2009). Morphology control in as-grown GaN nanoporous particles. Crystal Growth Design 9, 320326.
Chaplais, G. & Kaskel, S. (2004). Porosity control in pre-ceramic molecular precursor-derived GaN based materials. J Mater Chem 14, 10171025.
Chaplais, G., Schlichte, K., Stark, O., Fischer, R.A. & Kaskel, S. (2003). Template assisted design of microporous gallium nitride materials. Chem Commun 730731.
Chen, C.C., Yeh, C.C., Chen, C.H., Yu, M.Y., Li, H.L., Wu, J.J., Chen, K.H., Chen, L.C., Peng, J.Y. & Chen, Y.F. (2001). Catalytic growth and characterization of gallium nitride nanowires. J Am Chem Soc 123, 27912798.
Cherns, D., Henley, S.J. & Ponce, F.A. (2001). Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence. Appl Phys Lett 78, 26912693.
Diaz, D.J., Williamson, T.L., Adesida, I., Bohn, P.W. & Molnar, R.J. (2002). Morphology and luminescence of porous GaN generated via Pt-assisted electroless etching. J Vac Sci Technol B 20, 23752383.
Diaz, D.J., Williamson, T.L., Adesida, I., Bohn, P.W. & Molnar, R.J. (2003). Morphology evolution and luminescence properties of porous GaN generated via Pt-assisted electroless etching of hydride vapor phaser epitaxy GaN on sapphire. J Appl Phys 94, 75267534.
Föll, H., Carstensen, J. & Frey, S. (2006). Porous and nanoporous semiconductors and emerging applications. J Nanomater 2006(1), 91635-1–10.
Ghosh, B.K., Tanikawa, T., Hashimoto, A., Yamamoto, A. & Ito, Y. (2003). Reduced-stress GaN epitaxial layers grown on Si(111) by using a porous GaN interlayer converted from GaAs. J Crystal Growth 249, 422428.
Kucheyev, S.O., Williams, J.S., Jagadish, C., Zou, J., Craig, V.S.J. & Li, G. (2000). Ion-beam-induced porosity of GaN. Appl Phys Lett 77, 14551457.
Li, X., Kim, Y.W., Bohn, P.W. & Adesida, I. (2002). In-plane bandgap control in porous GaN through electroless wet chemical etching. Appl Phys Lett 80, 980982.
Miyajima, T., Hino, T., Tomiya, S., Yanashima, K., Nakajima, H., Araki, T., Nanishi, Y., Satake, A., Masumato, Y., Akimoto, K., Kobayashi, T. & Ikeda, M. (2001). Threading dislocations and optical properties of GaN and GaInN. Phys Status Solidi B 228, 395402.
Mynbaeva, M., Bazhenov, N., Evstropov, K.M., Saddow, S.E., Koshka, Y. & Melnik, Y. (2001). Photoconductivity in porous GaN layers. Phys Stat Sol B 228, 589592.
Mynbaeva, M., Titkov, A., Kryzhanovski, A., Ratnikov, V.V., Mynbaev, K., Huhtinen, H., Laiho, R. & Dmitriev, V.A. (2000). Structural characterization and strain relaxation in porous GaN layers. Appl Phys Lett 84, 11131115.
Mynbaeva, M., Titkov, A., Kryzhanovski, A., Kotousova, I., Zubrilov, A.S., Ratnikov, V.V., Davidov, V.Y., Kuznetsov, N.I., Mynbaev, K., Tsvetkov, D.V., Stepanov, S., Cherenkov, A. & Dmitriev, D.A. (1999). Strain relaxation in GaN layers grown on porous GaN sublayers. MRS Internet J Nitride Semicond Res 4, 14(1-5).
Pakes, A., Skeldon, P., Thompson, G.E., Fraser, J.W., Moisa, S., Sproule, G.I., Graham, M.J. & Newcomb, S.B. (2003). Anodic oxidation of gallium nitride. J Mater Sci 38, 343349.
Ponce, F.A., Bour, D.P., Götz, W. & Wright, P.J. (1996). Spatial distribution of the luminescence in GaN thin films. Appl Phys Lett 68, 5759.
Qhalid Fareed, R.S., Adivarahan, V., Chen, C.Q., Rai, S., Kuokstis, E., Yang, J.W., Khan, M.A., Caissie, J. & Molnar, R.J. (2004). Air-bridged lateral growth of crack-free Al0.24Ga0.76N on highly relaxed porous GaN. Appl Phys Lett 84, 696698.
Stöger, M., Breymesser, A., Schlosser, V., Ramadori, M., Plunger, V., Peiró, D., Voz, C., Bertomeu, J., Nelhiebel, M., Schattschneider, P. & Andreu, J. (1999). Investigation of defect formation and electronic transport in microcrystalline silicon deposited by hot-wire CVD. Physica B 273274, 540543.
Wang, Y.D., Chua, S.J., Sander, M.S., Chen, P., Tripathy, S. & Fonstad, C.G. (2004). Fabrication and properties of nanoporous GaN films. Appl Phys Lett 85, 816818.
Wohlfart, A., Devi, A., Hipler, F., Becker, H.W. & Fischer, R.A. (2001). Growth of porous columnar alpha-GaN layers on c-plane Al2O3 by MOCVD using bisazido dimethylaminopropyl gallium as single source precursor. J Phys IV 11, 683687.
Yamane, H., Shimada, M., Sekiguchi, T. & Di Salvo, F.J. (1998). Morphology and characterization of GaN single crystals grown in a Na flux. J Crystal Growth 186, 812.
Yano, M., Okamoto, M., Yap, Y.K., Yoshimura, M., Mori, Y. & Sasaki, T. (1999). Control of nucleation site and growth orientation of bulk GaN crystals. Jpn J Appl Phys 38, L1121L1123.
Yin, L.W., Bando, Y., Golberg, D., Gloter, A., Li, M.S., Yuan, X. & Sekiguchi, T. (2005). Porous BCN nanotubular fibers: Growth and spatially resolved cathodoluminescence. J Am Chem Soc 127, 1635416355.
Zangooie, S., Woollam, J.A. & Arwin, H. (2000). Self-organization in porous 6H-SiC. J Mater Res 15, 18601863.


Chemical Vapor Deposition of Porous GaN Particles on Silicon

  • Joan J. Carvajal (a1) (a2), Oleksandr V. Bilousov (a1), Dominique Drouin (a2), Magdalena Aguiló (a1), Francesc Díaz (a1) and J. Carlos Rojo (a3)...


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